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Issue 34, 2016
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Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

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Abstract

Vertical crossbar arrays provide a cost-effective approach for high density three-dimensional (3D) integration of resistive random access memory. However, an individual selector device is not allowed to be integrated with the memory cell separately. The development of V-RRAM has impeded the lack of satisfactory self-selective cells. In this study, we have developed a high performance bilayer self-selective device using HfO2 as the memory switching layer and a mixed ionic and electron conductor as the selective layer. The device exhibits high non-linearity (>103) and ultra-low half-select leakage (<0.1 pA). A four layer vertical crossbar array was successfully demonstrated based on the developed self-selective device. High uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity were achieved. The robust array level performance shows attractive potential for low power and high density 3D data storage applications.

Graphical abstract: Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

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Publication details

The article was received on 10 Mar 2016, accepted on 08 Jul 2016 and first published on 11 Jul 2016


Article type: Paper
DOI: 10.1039/C6NR02029A
Author version available: Download Author version (PDF)
Citation: Nanoscale, 2016,8, 15629-15636
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    Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

    Q. Luo, X. Xu, H. Liu, H. Lv, T. Gong, S. Long, Q. Liu, H. Sun, W. Banerjee, L. Li, J. Gao, N. Lu and M. Liu, Nanoscale, 2016, 8, 15629
    DOI: 10.1039/C6NR02029A

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