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A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology


Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Corresponding authors
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
E-mail: lvhangbing@ime.ac.cn, liuming@ime.ac.cn
Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China
Nanoscale, 2016,8, 15629-15636

DOI: 10.1039/C6NR02029A
Received 10 Mar 2016, Accepted 08 Jul 2016
First published online 11 Jul 2016
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Supplementary Info