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Issue 34, 2016
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GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell

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Abstract

We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and without the introduction of impurities. Self-catalyzed GaAs NW arrays were firstly grown on Si(111) substrates by solid-source molecular beam epitaxy. Aiming for protecting the active surface of the GaAs NW core, the arsenic-capping/decapping method has been applied. To validate the effect of this method, different core/shell NWs have been fabricated. Analyses highlight the benefit of the As capping–decapping method for further epitaxial shell growth: an epitaxial shell with a smooth surface is achieved in the case of As-capped–decapped GaAs NWs, comparable to the in situ grown GaAs/AlGaAs NWs. This As capping method opens a way for the epitaxial growth of heterogeneous material shells such as functional oxides using different reactors.

Graphical abstract: GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell

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Publication details

The article was received on 15 Jun 2016, accepted on 27 Jul 2016 and first published on 28 Jul 2016


Article type: Paper
DOI: 10.1039/C6NR04817J
Citation: Nanoscale, 2016,8, 15637-15644
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    GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell

    X. Guan, J. Becdelievre, A. Benali, C. Botella, G. Grenet, P. Regreny, N. Chauvin, N. P. Blanchard, X. Jaurand, G. Saint-Girons, R. Bachelet, M. Gendry and J. Penuelas, Nanoscale, 2016, 8, 15637
    DOI: 10.1039/C6NR04817J

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