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Issue 9, 2015
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Certified ion implantation fluence by high accuracy RBS

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Abstract

From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering spectrometry (RBS) of test implants from our quality assurance programme. The RBS is traceable to the certified reference material IRMM-ERM-EG001/BAM-L001, and involves convenient calibrations both of the electronic gain of the spectrometry system (at about 0.1% accuracy) and of the RBS beam energy (at 0.06% accuracy). We demonstrate that accurate RBS is a definitive method to determine quantity of material. It is therefore useful for certifying high quality reference standards, and is also extensible to other kinds of samples such as thin self-supporting films of pure elements. The more powerful technique of Total-IBA may inherit the accuracy of RBS.

Graphical abstract: Certified ion implantation fluence by high accuracy RBS

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Publication details

The article was received on 16 Dec 2014, accepted on 11 Feb 2015 and first published on 11 Feb 2015


Article type: Paper
DOI: 10.1039/C4AN02316A
Citation: Analyst, 2015,140, 3251-3261
  • Open access: Creative Commons BY license
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    Certified ion implantation fluence by high accuracy RBS

    J. L. Colaux, C. Jeynes, K. C. Heasman and R. M. Gwilliam, Analyst, 2015, 140, 3251
    DOI: 10.1039/C4AN02316A

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