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Issue 12, 2018
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High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride

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Abstract

Hexagonal boron nitride (h-BN), an isomorph of graphene, has attracted great attention owing to its potential applications as an ultra-flat substrate or gate dielectric layer in novel graphene-based devices. Besides, h-BN appears to be a promising material for deep ultraviolet (DUV) optoelectronic applications because of its extraordinary physical properties, such as wide band gap and high absorption coefficient. In this work, two-dimensional h-BN with controllable layers was synthesized on Cu foils by ion beam sputtering deposition, and DUV photodetectors were fabricated from the transferred h-BN layers on SiO2/Si substrates. The h-BN layers synthesized at the higher substrate temperature possess a lower density of domain boundaries and higher crystalline quality, and the photodetectors based on a 3 nm h-BN layer exhibited high performance with an on/off ratio of >103 under DUV light illumination at 212 nm and a cutoff wavelength at around 225 nm. This work demonstrates that two-dimensional h-BN layers are promising for the construction of high-performance solar-blind photodetectors.

Graphical abstract: High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride

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Publication details

The article was received on 19 Dec 2017, accepted on 22 Feb 2018 and first published on 27 Feb 2018


Article type: Paper
DOI: 10.1039/C7NR09438H
Citation: Nanoscale, 2018,10, 5559-5565
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    High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride

    H. Liu, J. Meng, X. Zhang, Y. Chen, Z. Yin, D. Wang, Y. Wang, J. You, M. Gao and P. Jin, Nanoscale, 2018, 10, 5559
    DOI: 10.1039/C7NR09438H

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