Electrical and structural properties of Bi2Te3 and Sb2Te3 thin films grown by the nanoalloying method with different deposition patterns and compositions†
Abstract
Thin films of Bi2Te3 and Sb2Te3 were synthesized by the nanoalloying approach, which has recently been proven to yield V–VI compounds with good thermoelectric properties and has several advantages over “conventional” growth on hot substrates. Firstly, repeating layers of the elements Bi, Sb and Te with a thickness in the range between 0.2 nm and 2.4 nm were deposited on BaF2 (111) substrates in an MBE system at room temperature with different deposition patterns for different samples, i.e. in bilayer and quintuple stacks, with different starting layer thicknesses and different Te contents. Subsequently, the element layer stacks were annealed in order to induce