Issue 3, 2011

Synthesis of anti-reflective and hydrophobic Si nanorod arrays by colloidal lithography and reactive ion etching

Abstract

Si nanorod arrays (NRAs) mimicking moth-eye structures were fabricated with colloidal lithography and reactive ion etching. Compared with that on polished surface, the reflectance on NRA structures is significantly reduced by more than 10 times. The reflectance is decreased with the height of the NRAs. The anti-reflection (AR) ability of the NRAs is accompanied with broad band, omnidirectional, and polarization-insensitive characteristics. The enhancement of surface hydrophobicity is also observed with increasing height of the NRAs. A detailed experimental analysis of the height-dependent AR and self-cleaning characteristics will benefit the design and optimization processes of Si nanowire-based optoelectronic devices.

Graphical abstract: Synthesis of anti-reflective and hydrophobic Si nanorod arrays by colloidal lithography and reactive ion etching

Article information

Article type
Paper
Submitted
05 May 2010
Accepted
24 Sep 2010
First published
28 Oct 2010

CrystEngComm, 2011,13, 1014-1017

Synthesis of anti-reflective and hydrophobic Si nanorod arrays by colloidal lithography and reactive ion etching

K. Y. Lai, Y. Lin, H. Wang and J. He, CrystEngComm, 2011, 13, 1014 DOI: 10.1039/C0CE00168F

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