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Issue 27, 2012
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Metal oxide nanowire transistors

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Abstract

Metal oxide nanowires are promising building blocks for thin film transistors due to their one-dimensional geometry in nanoscale, high crystalline nature, and excellent optical and electrical properties. In the past decade, intensive research interest has been drawn to metal oxide nanowire transistors, and various metal oxide nanowires like ZnO, In2O3, and SnO2 have been fabricated into thin film transistors to study their electrical properties and the characteristics as transistor active channels. Much effort has been paid to promote the performance of metal oxide nanowire transistors, and expand the application areas covering from sensing devices, transparent and flexible electronics, to memories and integrated logic circuits. In this review, we highlight the state-of-art progress in metal oxide nanowire transistors, with an emphasis on basic properties and performances. We summarize the characteristics of transistors based on different metal oxide nanowires, the strategies to improve the performance, and various application fields. Finally we present an outlook on the future development of metal oxide nanowire transistors, including the study of material properties, the design of device structures and the development of applications.

Graphical abstract: Metal oxide nanowire transistors

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Publication details

The article was received on 18 Mar 2012, accepted on 30 Apr 2012, published on 01 May 2012 and first published online on 01 May 2012


Article type: Feature Article
DOI: 10.1039/C2JM31679J
Citation: J. Mater. Chem., 2012,22, 13428-13445
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    Metal oxide nanowire transistors

    H. Huang, B. Liang, Z. Liu, X. Wang, D. Chen and G. Shen, J. Mater. Chem., 2012, 22, 13428
    DOI: 10.1039/C2JM31679J

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