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A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology
Impact Factor 7.76 48 Issues per Year
Review Article

Resistive switching memory: observations with scanning probe microscopy

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Corresponding authors
a
Department of Materials Science and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Korea
E-mail: cheolsh@snu.ac.kr
Nanoscale, 2011,3, 490-502

DOI: 10.1039/C0NR00580K
Received 11 Aug 2010, Accepted 09 Oct 2010
First published online 25 Nov 2010
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