Full Text
Advanced Search
Work has begun on improving our website! Close the message box
Our website is evolving and our goal is to create a great user experience for our readers and authors. You will see regular enhancements to our site in the coming months.
Please visit our news site for further information.

A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology
Impact Factor 7.76 48 Issues per Year
Review Article

Resistive switching memory: observations with scanning probe microscopy

Corresponding authors
Department of Materials Science and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Korea
E-mail: cheolsh@snu.ac.kr
Nanoscale, 2011,3, 490-502

DOI: 10.1039/C0NR00580K
Received 11 Aug 2010, Accepted 09 Oct 2010
First published online 25 Nov 2010
Please wait while Download options loads