Issue 21, 2004
From the journal:

Journal of Materials Chemistry

Bismuth precursors for atomic layer deposition of bismuth-containing oxide films†

Marko Vehkamäki,a   Timo Hatanpää,a   Mikko Ritalaa  and  Markku Leskeläa  

a Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, PO Box 55, FIN-00014 Helsinki, Finland

Abstract

Several bismuth amides and a bismuth thioamidate compound were synthesized and characterized in order to find volatile bismuth precursors for atomic layer deposition (ALD) of oxide materials. Crystal structures of Bi(N(SiMe3)2)3 and Bi(SC(Me)NPri)3 are reported. Based on precursor characterization Bi(N(SiMe3)2)3 was selected for film deposition experiments. It was found that alternate surface reactions of Bi(N(SiMe3)2)3 and H2O can be used for ALD of amorphous BiOx, Bi–Ta–O and Sr–Bi–Ta–O at 190–200 °C. After post-deposition annealing at 800 °C in oxygen the SrBi2Ta2O9 layered perovskite phase was obtained.

Graphical abstract: Bismuth precursors for atomic layer deposition of bismuth-containing oxide films

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Article information

DOI
https://doi.org/10.1039/B405891G
Article type
Paper
Submitted
20 Apr 2004
Accepted
11 Jun 2004
First published
22 Sep 2004

J. Mater. Chem., 2004,14, 3191-3197

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Bismuth precursors for atomic layer deposition of bismuth-containing oxide films

M. Vehkamäki, T. Hatanpää, M. Ritala and M. Leskelä, J. Mater. Chem., 2004, 14, 3191 DOI: 10.1039/B405891G

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