Issue 35, 2023

Recent progress in films with nanoengineered surfaces via bubble-induced self-assembly for energy applications

Abstract

Films with nanoengineered surfaces have been extensively utilized in a variety of energy-related applications such as water desalination, thermal management and solar steam generation. To generate high-quality films, various generation methods including chemical vapor deposition (CVD), electrodeposition and microlithography have been studied. Compared to these methods, however, bubble-induced self-assembly (BISA) has been developed as an alternative strategy due to the advantages of being simple and cost-effective, and has generated considerable research efforts. In this paper, we review the recent advances in the development of films with nanoengineered surfaces via the BISA of nanomaterials. The mechanism and regulation of the BISA to generate high-performance films with the desired surface characteristics are discussed in detail. We also highlight the application of the BISA strategy for use in enhanced phase-change heat transfer. In addition, other applications of the BISA strategy are described, which range from effective thermal management of electronics and concentrated photovoltaics, to advanced energy storage and conversion. Finally, we discuss the current challenges and potential research directions in the field. It is expected that this review will provide a comprehensive understanding of the design, generation, applications and perspectives of films with nanoengineered surfaces generated by the BISA.

Graphical abstract: Recent progress in films with nanoengineered surfaces via bubble-induced self-assembly for energy applications

Supplementary files

Article information

Article type
Review Article
Submitted
31 Mey 2023
Accepted
08 Aga 2023
First published
09 Aga 2023

J. Mater. Chem. A, 2023,11, 18478-18501

Recent progress in films with nanoengineered surfaces via bubble-induced self-assembly for energy applications

B. Chu, B. Fu, R. Wang, W. Cheng, P. Tao, C. Song, W. Shang and T. Deng, J. Mater. Chem. A, 2023, 11, 18478 DOI: 10.1039/D3TA03220E

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