Inkjet-printed h-BN memristors for hardware security

Kaichen Zhu, Giovanni Vescio, Sergio González-Torres, Julià López-Vidrier, Juan Luis Frieiro, Sebastian Pazos, Xu Jing, Xu Gao, Sui-Dong Wang, Joaquín Ascorbe-Muruzábal, Juan A. Ruiz-Fuentes, Albert Cirera, Blas Garrido and Mario Lanza

Nanoscale, 2023, 15, 9985
DOI: 10.1039/D3NR00030C

3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach

D. Maldonado, A. Cantudo, F. M. Gómez-Campos, Yue Yuan, Yaqing Shen, Wenwen Zheng, M. Lanza and J. B. Roldán

Mater. Horiz., 2024, 11, 949
DOI: 10.1039/D3MH01834B

Nanoionics enabled atomic point contact construction and quantum conductance effects

Runsheng Gao, Xiaoyu Ye, Cong Hu, Ziyi Zhang, Xinhui Ji, Yanyu Zhang, Xiaohan Meng, Huali Yang, Xiaojian Zhu and Run-Wei Li

Mater. Horiz., 2025, 12, 37
DOI: 10.1039/D4MH00916A

Current oscillations via stochastic resonance effect at the vicinity of graphene Dirac point

Jing Ma, Zhuocheng Jiang, Shijie Pan, Hui Zhu, Jun Deng, Hanyuan Liang, Yudi Zhao, Shiwei Feng and Bo Liu

Review of Materials Research, 2026, 2, 100165
DOI: 10.1016/j.revmat.2026.100165

True random number generators in modern cryptography: A review

Parul Sharma, Syed Farah Naz and Ambika Prasad Shah

Memories - Materials, Devices, Circuits and Systems, 2026, 13, 100138
DOI: 10.1016/j.memori.2026.100138

Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdú, Andrés Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluís Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande and Mario Lanza

Nat Electron, 2024, 7, 557
DOI: 10.1038/s41928-024-01192-2

Enhancing Physical Randomness in Ta2O5/HfO2 Based Memristors through Electrode Engineering for True Random Number Generation

Bei Jiang, Yong Wang, Yahui Qing, Yongtao Shan, Ruxin Li, Zihan Wu, Zihao Chen, Liao Zhao, Desheng Cai, Peiliang Su, Xingqiang Liu, Kenli Li, Hao Huang, Xingan Jiang, Xiangdong Yang, Cong Ye and Xuming Zou

ACS Nano, 2025, 19, 36196
DOI: 10.1021/acsnano.5c05204

Advancements in 2D layered material memristors: unleashing their potential beyond memory

Kiran A. Nirmal, Dhananjay D. Kumbhar, Arul Varman Kesavan, Tukaram D. Dongale and Tae Geun Kim

npj 2D Mater Appl, 2024, 8
DOI: 10.1038/s41699-024-00522-4

Solution-processed memristors: performance and reliability

Sebastian Pazos, Xiangming Xu, Tianchao Guo, Kaichen Zhu, Husam N. Alshareef and Mario Lanza

Nat Rev Mater, 2024, 9, 358
DOI: 10.1038/s41578-024-00661-6

2D materials-memristive devices nexus: From status quo to Impending applications

Muhammad Muqeet Rehman, Yarjan Abdul Samad, Jahan Zeb Gul, Muhammad Saqib, Maryam Khan, Rayyan Ali Shaukat, Rui Chang, Yijun Shi and Woo Young Kim

Progress in Materials Science, 2025, 152, 101471
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The Stochastic Origin of Random Telegraph Noise

Francesco Maria Puglisi

Fluct. Noise Lett., 2025
DOI: 10.1142/S0219477525400243

Heterojunction‐Driven Stochasticity: Bi‐Heterojunction Noise‐Enhanced Negative Transconductance Transistor in Image Generation

Youngmin Han, Ryun‐Han Koo, Jaechan Song, Chang‐Hyun Kim, Eun Kwang Lee, Wonjun Shin and Hocheon Yoo

Advanced Materials, 2025, 37
DOI: 10.1002/adma.202505150

Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source

Jinwoo Park, Hyunjoong Kim and Hyungjin Kim

Advanced Intelligent Systems, 2025, 7
DOI: 10.1002/aisy.202400648

True random number generator using stochastic noise signal of memristor with variation tolerance

Dayeon Yu, Suhyeon Ahn, Sangwook Youn, Jinwoo Park and Hyungjin Kim

Chaos, Solitons & Fractals, 2024, 189, 115708
DOI: 10.1016/j.chaos.2024.115708

Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors

Zhujun Huang, Ryong-Gyu Lee, Edoardo Cuniberto, Jiyoon Song, Jeongwon Lee, Abdullah Alharbi, Kim Kisslinger, Takashi Taniguchi, Kenji Watanabe, Yong-Hoon Kim and Davood Shahrjerdi

ACS Nano, 2024, 18, 28700
DOI: 10.1021/acsnano.4c06929

On-chip direct synthesis of boron nitride memristors

Jing Xie, Ali Ebadi Yekta, Fahad Al Mamun, Kaichen Zhu, Maolin Chen, Sebastian Pazos, Wenwen Zheng, Xixiang Zhang, Seth Ariel Tongay, Xinyi Li, Huaqiang Wu, Robert Nemanich, Deji Akinwande, Mario Lanza and Ivan Sanchez Esqueda

Nat. Nanotechnol., 2025, 20, 1596
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High-yield photolithography protocol to pattern metallic electrodes on 2D materials without adhesive metallic layers

Wenwen Zheng, Kaichen Zhu, Sebastian Pazos, Yaqing Shen, Yue Yuan, Osamah Alharbi, Yue Ping and Mario Lanza

Applied Surface Science Advances, 2025, 29, 100820
DOI: 10.1016/j.apsadv.2025.100820

Highly stable two-level current fluctuation in complex oxide heterostructures

Doyeop Kim, Jung-Woo Lee, Jihyun Lim, Sungjun Choi, Khimananda Acharya, Seobin Oh, Jaewhan Oh, Tula R. Paudel, Yongsoo Yang, Kitae Eom, Sunwoo Lee and Hyungwoo Lee

Nat Commun, 2025, 16
DOI: 10.1038/s41467-025-60672-x

Generation of Random Numbers on a Microcontroller Platform

Mustafa Sanlı

UMAG, 2024
DOI: 10.29137/umagd.1392479

Advanced Materials‐Based Technologies for Security and Cryptographic Applications: Opportunities and Challenges

Sebastiano Strangio, Elisabetta Dimaggio, Damiano Marian, Alessandro Catania, Alejandro Toral‐Lopez, Francesco Pieri, Giuseppe Iannaccone and Gianluca Fiori

Adv Funct Materials, 2026
DOI: 10.1002/adfm.202529572

2D Material‐Based Bioinspired Devices for Neuromorphic Computing

Chenguang Zhu, Guangcheng Wu, Xingxia Sun, Jiali Yi, Tanghao Xie, Huawei Liu, Dong Li and Anlian Pan

Small, 2025
DOI: 10.1002/smll.202504118

SnS2 memtransistor-based Lorenz chaotic system for true random number generation

Shania Rehman, Moon-Seok Kim, Muhammad Farooq Khan and Sungho Kim

Nano Energy, 2024, 127, 109764
DOI: 10.1016/j.nanoen.2024.109764

Ferroelectric Stochasticity in 2D CuInP2S6 and Its Application for True Random Number Generator

Seongkweon Kang, Doojin Hong, Biswajit Das, Sang‐Min Lee, Ji‐Sang Park, Yoonmyung Lee and Sungjoo Lee

Advanced Materials, 2025, 37
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Memristors based on two-dimensional h-BN materials: synthesis, mechanism, optimization and application

Shaojie Zhang, Ye Tao, Shiwei Qin, Dong Li, Kunkun Cao, Lin Lv, Guokun Ma, Yiheng Rao, Houzhao Wan and Wang Hao

npj 2D Mater Appl, 2024, 8
DOI: 10.1038/s41699-024-00519-z

Density functional theory and molecular dynamics simulations for resistive switching research

Marco A. Villena, Onurcan Kaya, Udo Schwingenschlögl, Stephan Roche and Mario Lanza

Materials Science and Engineering: R: Reports, 2024, 160, 100825
DOI: 10.1016/j.mser.2024.100825

Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction N‐Shape Switching Transistors

Juhyung Seo, Seungme Kang, Divake Kumar, Wonjun Shin, Jinill Cho, Taesung Kim, Yeongkwon Kim, Byung Chul Jang, Amit R. Trivedi and Hocheon Yoo

Adv Funct Materials, 2025, 35
DOI: 10.1002/adfm.202411348

Automated Framework for Testing Random Number Generators for IoT Security Applications Using NIST SP 800-22

Juan Castillo, Pere Aran Vila, Francisco Palacio, Blas Garrido, Sergi Hernández and Albert Cirera

IoT, 2026, 7, 26
DOI: 10.3390/iot7010026

Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators

Tommaso Zanotti, Alok Ranjan, Sean J. O’Shea, Nagarajan Raghavan, Ramesh Thamankar, Kin Leong Pey and Francesco Maria Puglisi

IEEE Trans. Device Mater. Relib., 2024, 24, 184
DOI: 10.1109/TDMR.2024.3394576

A 2.22 Mb/s True Random Number Generator Based on a GeTex Ovonic Threshold Switching Memristor

Yuyang Fu, Jinyu Wen, Lun Wang, Ling Yang, Qihang Zhu, Wenbin Zuo, Puyi Zhang, Yi Li, Hao Tong, Guokun Ma, Hao Wang and Xiangshui Miao

IEEE Electron Device Lett., 2023, 44, 853
DOI: 10.1109/LED.2023.3259000