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Exploring the Physical Origin of the Negative Capacitance Effect in a Metal–Ferroelectric–Metal–Dielectric Structure

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Investigating charge trapping in ferroelectric thin films through transient measurements

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Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors

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Charge Injection for Polarization Screening at Electrode Interfaces and the Antiferroelectric Double Hysteresis Loop of La‐Doped Pb(Zr,Sn,Ti)O3

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Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic Computing

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Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions

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Negative Capacitance from the Inhomogenous Stray Field in a Ferroelectric–Dielectric Structure

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A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

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Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

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Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm

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