Issue 4, 2024

High density electron doping in boron-doped twisted bilayer graphene: a ladder to extended flat-band

Abstract

Realizing Von Hove singularity (VHS) and extended flat bands of graphene near the Fermi level (EF) is of great significance to explore many-body interactions, with a high tendency towards superconductivity. In this study, we report that the VHS of π* bands near EF can be realized by high-density lithium intercalation in p-type doped twisted bilayer graphene (tBLG). First, a method to predict the highest lithium intercalation in tBLG systems with arbitrary twist angle was established which proves that the interlayer twisting leads to the clustering of lithium ions in the AA-region but reduces the overall concentration. Second, we show that the p-type doping (1.35% boron) in tBLGs enhances their electron acceptance capability by increasing lithium intercalation up to 47%. In this situation, the electron doping by lithium intercalation is sufficient to shift EF near the VHS which offers a strategic path to realize extended flat bands, and to investigate the strong correlations in the tBLG systems.

Graphical abstract: High density electron doping in boron-doped twisted bilayer graphene: a ladder to extended flat-band

  • This article is part of the themed collection: #MyFirstMH

Supplementary files

Article information

Article type
Communication
Submitted
02 8月 2023
Accepted
04 12月 2023
First published
11 12月 2023

Mater. Horiz., 2024,11, 1046-1053

High density electron doping in boron-doped twisted bilayer graphene: a ladder to extended flat-band

K. Tanwar, X. Wu, X. Tan, S. C. Smith, J. Li and Y. (. Chen, Mater. Horiz., 2024, 11, 1046 DOI: 10.1039/D3MH01213A

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