Issue 18, 2024

Hysteresis in memristors produces conduction inductance and conduction capacitance effects

Abstract

Memristors are devices in which the conductance state can be alternately switched between a high and a low value by means of a voltage scan. In general, systems involving a chemical inductor mechanism as solar cells, asymmetric nanopores in electrochemical cells, transistors, and solid state memristive devices, exhibit a current increase and decrease over time that generates hysteresis. By performing small signal ac impedance spectroscopy, we show that memristors, or any other system with hysteresis relying on the conductance modulation effect, display intrinsic dynamic inductor-like and capacitance-like behaviours in specific input voltage ranges. Both the conduction inductance and the conduction capacitance originate in the same delayed conduction process linked to the memristor dynamics and not in electromagnetic or polarization effects. A simple memristor model reproduces the main features of the transition from capacitive to inductive impedance spectroscopy spectra, which causes a nonzero crossing of current–voltage curves.

Graphical abstract: Hysteresis in memristors produces conduction inductance and conduction capacitance effects

Article information

Article type
Paper
Submitted
08 2月 2024
Accepted
15 4月 2024
First published
15 4月 2024
This article is Open Access
Creative Commons BY license

Phys. Chem. Chem. Phys., 2024,26, 13804-13813

Hysteresis in memristors produces conduction inductance and conduction capacitance effects

J. Bisquert, J. B. Roldán and E. Miranda, Phys. Chem. Chem. Phys., 2024, 26, 13804 DOI: 10.1039/D4CP00586D

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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