Issue 40, 2023

B/N/O-participated multi-resonance TADF emitters by a simple peripheral decoration strategy enable high-efficiency electroluminescence with EQEs up to 36.5%

Abstract

Multi-resonance thermally activated delayed fluorescence (MR-TADF) emitters featuring intrinsic narrowband emission are highly attractive for organic light-emitting electroluminescence device with g diodes (OLEDs) with high color purity. In this work, two new MR-TADF emitters, namely DCzBNO and TCzBNO, were designed and prepared, which featured the MR effect induced by the opposite boron and nitrogen/oxygen atom. By virtue of the good photophysical properties including the small singlet–triplet splitting and high photoluminescence quantum yield, DCzBNO achieved a maximum external quantum efficiency (EQE) of 21.6% with Commission Internationale de l’Eclairage (CIE) coordinates of (0.13, 0.28) in electroluminescence devices, which could be enhanced to 31.7% in the TADF-sensitized device using a TADF emitter as the sensitizer. Impressively, the TCzBNO-based sensitized device delivered an excellent maximum EQE of 36.5%, with suppressed efficiency roll-off at the brightness of 1000 cd m−2.

Graphical abstract: B/N/O-participated multi-resonance TADF emitters by a simple peripheral decoration strategy enable high-efficiency electroluminescence with EQEs up to 36.5%

Supplementary files

Article information

Article type
Paper
Submitted
21 7月 2023
Accepted
16 9月 2023
First published
18 9月 2023

J. Mater. Chem. C, 2023,11, 13733-13739

B/N/O-participated multi-resonance TADF emitters by a simple peripheral decoration strategy enable high-efficiency electroluminescence with EQEs up to 36.5%

Y. Xu, J. Han, N. Li, Z. Huang, J. Miao and C. Yang, J. Mater. Chem. C, 2023, 11, 13733 DOI: 10.1039/D3TC02574H

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