Issue 32, 2023

Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Abstract

Although vertical configurations for high-density storage require challenging process steps, such as etching high aspect ratios and atomic layer deposition (ALD), they are more affordable with a relatively simple lithography process and have been employed in many studies. Herein, the potential of memristors with CMOS-compatible 3D vertical stacked structures of Pt/Ti/HfOx/TiN-NCs/HfOx/TiN is examined for use in neuromorphic systems. The electrical characteristics (including IV properties, retention, and endurance) were investigated for both planar single cells and vertical resistive random-access memory (VRRAM) cells at each layer, demonstrating their outstanding non-volatile memory capabilities. In addition, various synaptic functions (including potentiation and depression) under different pulse schemes, excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) were investigated. In pattern recognition simulations, an improved recognition rate was achieved by the linearly changing conductance, which was enhanced by the incremental pulse scheme. The achieved results demonstrated the feasibility of employing VRRAM with TiN nanocrystals in neuromorphic systems that resemble the human brain.

Graphical abstract: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Associated articles

Supplementary files

Article information

Article type
Paper
Submitted
26 4月 2023
Accepted
12 7月 2023
First published
12 7月 2023

Nanoscale, 2023,15, 13239-13251

Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

S. Yang, T. Kim, S. Kim, D. Chung, T. Kim, J. K. Lee, S. Kim, M. Ismail, C. Mahata, S. Kim and S. Cho, Nanoscale, 2023, 15, 13239 DOI: 10.1039/D3NR01930F

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