Issue 5, 2023

Depolarization induced III–V triatomic layers with tristable polarization states

Abstract

The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal compatibility with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few silicon-compatible ferroelectrics suitable for device downscaling. We demonstrate with first-principles calculations that the enhanced depolarization field at the nanoscale can be utilized to soften unswitchable wurtzite III–V semiconductors, resulting in ultrathin two-dimensional (2D) sheets possessing reversible polarization states. A 2D sheet of AlSb consisting of three atomic planes is identified to host both ferroelectricity and antiferroelectricity, and the tristate switching is accompanied by a metal–semiconductor transition. The thermodynamic stability and potential synthesizability of the triatomic layer are corroborated with phonon spectrum calculations, ab initio molecular dynamics simulations, and variable-composition evolutionary structure search. We propose a 2D AlSb-based homojunction field effect transistor that supports three distinct and nonvolatile resistance states. This new class of III–V semiconductor-derived 2D materials with dual ferroelectricity and antiferroelectricity opens up the opportunity for nonvolatile multibit-based integrated nanoelectronics.

Graphical abstract: Depolarization induced III–V triatomic layers with tristable polarization states

Supplementary files

Article information

Article type
Communication
Submitted
30 1月 2023
Accepted
09 3月 2023
First published
10 3月 2023

Nanoscale Horiz., 2023,8, 616-623

Depolarization induced III–V triatomic layers with tristable polarization states

C. Ke, Y. Hu and S. Liu, Nanoscale Horiz., 2023, 8, 616 DOI: 10.1039/D3NH00026E

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