Issue 6, 2023

Large-area 2D bismuth antimonide with enhanced thermoelectric properties via multiscale electron–phonon decoupling

Abstract

It is a challenge to obtain high thermoelectric efficiency owing to the conflicting parameters of the materials that are required. In this work, the composition-adjustable 2D bismuth antimonide (Bi100−xSbx) is synthesized using an e-beam evaporation system with homemade targets. Engineering multiscale defects is done to optimize the thermoelectric performance in the compound. Sb alloying introduces atomic defects, lattice distortion and increased grain boundary. They drastically decrease the thermal conductivity, with an ultralow value of ∼0.23 W m−1 K−1 obtained for the composition with x = 18. It is noticed that the atomic and nanoscale defects do not deteriorate the electrical conductivity (105 S m−1), and the value is even comparable to the bulk counterpart over a wide composition range (0 ≤ x ≤ 35). Annealing induces pore structure with microscale defects, which increase the Seebeck coefficient by 84% due to the energy barrier. The resultant ZT of 0.13 is enhanced by 420% in the annealed Bi82Sb18 when compared with the as-grown Bi. This work demonstrates a cost-effective and controllable way to decouple electrons and phonons in the thermoelectric field.

Graphical abstract: Large-area 2D bismuth antimonide with enhanced thermoelectric properties via multiscale electron–phonon decoupling

Supplementary files

Article information

Article type
Communication
Submitted
30 9月 2022
Accepted
07 3月 2023
First published
08 3月 2023

Mater. Horiz., 2023,10, 2053-2061

Large-area 2D bismuth antimonide with enhanced thermoelectric properties via multiscale electron–phonon decoupling

H. Zhao, Y. Xue, Y. Zhao, J. Chen, B. Chang, H. Huang, T. Xu, L. Sun, Y. Chen, J. Sha, B. Zhu and L. Tao, Mater. Horiz., 2023, 10, 2053 DOI: 10.1039/D2MH01226J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements