Issue 37, 2022

Quasi-2D halide perovskite crystals and their optoelectronic applications

Abstract

Due to the widely tunable and exceptional semiconductor properties, quasi-two-dimensional (2D) halide perovskites have been considered outstanding candidates for next-generation optoelectronic devices and have thus undergone rapid development over the last decade. Their property tunability is intimately correlated with the quantum-well thickness (corresponding to the n value, the number of octahedral layers in each layer of quasi-2D halide perovskites). However, a systematic review of the relationship between the n value and the optoelectronic properties/applications of the quasi-2D perovskites is lacking. In this review, we begin with the n-dependent properties of quasi-2D perovskites, and move on to the synthesis of different forms of quasi-2D perovskite crystals. Afterwards, we focus on the existing optoelectronic applications using quasi-2D perovskites including light-emitting diodes, solar cells, lasers, and photodetectors. In the last section, we discuss the current challenges and a few promising directions with a special focus on the precise control of the n value. Moreover, the possible non-centrosymmetrical ordering of the organic ligands in quasi-2D halide perovskites provides new insights and opportunities to study the interaction between spontaneous polarization, photovoltaic effect, and carrier transport behaviors in the corresponding electronic and optoelectronic devices.

Graphical abstract: Quasi-2D halide perovskite crystals and their optoelectronic applications

Article information

Article type
Review Article
Submitted
21 3月 2022
Accepted
09 5月 2022
First published
10 5月 2022

J. Mater. Chem. A, 2022,10, 19169-19183

Quasi-2D halide perovskite crystals and their optoelectronic applications

X. Sheng, Y. Li, M. Xia and E. Shi, J. Mater. Chem. A, 2022, 10, 19169 DOI: 10.1039/D2TA02219B

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