Issue 7, 2022

Fabrication of solution-processable OFET memory using a nano-floating gate based on a phthalocyanine-cored star-shaped polymer

Abstract

Solution-processed organic field-effect transistor (OFET) memory devices are fabricated using a blend film of 6,13-bis(triisopropylsilylethynyl)pentacene and phthalocyanine-cored star-shaped polystyrene. A highly crystalline organic semiconductor thin film was obtained on the star-shaped polymer with charge-trapping sites via a one-pot spin-coating process through vertical phase separation, which is advantageous for OFET memory device applications. The resultant OFET device demonstrated a charge carrier mobility of 0.10 cm2 V−1 s−1 and an on/off current ratio of 106. Upon application of a gate bias, a substantial reversible threshold shift was observed, along with long charge-retention ability, thereby confirming the memory characteristics of the device.

Graphical abstract: Fabrication of solution-processable OFET memory using a nano-floating gate based on a phthalocyanine-cored star-shaped polymer

Supplementary files

Article information

Article type
Paper
Submitted
16 11月 2021
Accepted
02 2月 2022
First published
04 2月 2022
This article is Open Access
Creative Commons BY license

Mater. Adv., 2022,3, 3128-3134

Fabrication of solution-processable OFET memory using a nano-floating gate based on a phthalocyanine-cored star-shaped polymer

J. Aimi, T. Yasuda, C. Huang, M. Yoshio and W. Chen, Mater. Adv., 2022, 3, 3128 DOI: 10.1039/D1MA01081F

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