Issue 39, 2022

Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2−n thin films

Abstract

Atomic layer deposition offers outstanding film uniformity and conformality on substrates with high aspect ratio features. These qualities are essential for mixed-halide perovskite films applied in tandem solar cells, transistors and light-emitting diodes. The optical and electronic properties of mixed-halide perovskites can be adjusted by adjusting the ratios of different halides. So far ALD is only capable of depositing iodine-based halide perovskites whereas other halide processes are lacking. We describe six new low temperature (≤100 °C) ALD processes for PbCl2 and PbBr2 that are crucial steps for the deposition of mixed-halide perovskites with ALD. Lead bis[bis(trimethylsilyl)amide]–GaCl3 and –TiBr4 processes yield the purest, crystalline, uniform and conformal films of PbCl2 and PbBr2 respectively. We show that these two processes in combination with a PbI2 process from the literature deposit mixed lead halide films. The four less optimal processes revealed that reaction by-products in lead halide deposition processes may cause film etching or incorporate themselves into the film.

Graphical abstract: Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2−n thin films

Supplementary files

Article information

Article type
Paper
Submitted
10 7月 2022
Accepted
15 9月 2022
First published
16 9月 2022
This article is Open Access
Creative Commons BY license

Dalton Trans., 2022,51, 15142-15157

Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2−n thin films

G. Popov, G. Bačić, C. Van Dijck, L. S. Junkers, A. Weiß, M. Mattinen, A. Vihervaara, M. Chundak, P. Jalkanen, K. Mizohata, M. Leskelä, J. D. Masuda, S. T. Barry, M. Ritala and M. Kemell, Dalton Trans., 2022, 51, 15142 DOI: 10.1039/D2DT02216H

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