Issue 16, 2020

Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

Abstract

Recently, hafnia ferroelectrics with two spontaneous polarization states have attracted marked attention for non-volatile, super-steep switching devices, and neuromorphic application due to their fast switching, scalability, and CMOS compatibility. However, field cycling-induced instabilities are a serious obstacle in the practical application of various low-power electronic devices that require a settled characteristic of polarization hysteresis. In this work, a large reduction in the field cycling-induced instabilities and significantly improved ferroelectric properties were observed in a Hf0.5Zr0.5O2 (HZO) thin film with a RuO2 oxide electrode. The oxide electrode can supply additional oxygen to the HZO film, consequently minimizing the oxygen vacancies at the interface which is the origin of low reliability. From the material and electrical analysis results, we verified that HZO with the RuO2 electrode has less non-ferroelectric dead layers and fewer oxygen vacancies at the interface, resulting in excellent switching properties and improved reliability. This result suggests a beneficial method to produce high-quality hafnia thin films free from interfacial defects and with stable field cycling electrical properties for actual applications.

Graphical abstract: Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

Article information

Article type
Paper
Submitted
03 2月 2020
Accepted
25 3月 2020
First published
25 3月 2020

Nanoscale, 2020,12, 9024-9031

Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

Y. Goh, S. H. Cho, S. K. Park and S. Jeon, Nanoscale, 2020, 12, 9024 DOI: 10.1039/D0NR00933D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements