Issue 2, 2018

PbI2 band gap engineering by gel incorporation

Abstract

Incorporation of guest materials into semiconducting single crystalline hosts leads to the formation of semiconducting single-crystal composites. However, limited efforts have been made to comprehensively investigate the property of these potential functionalized single-crystal composites. Herein, PbI2/gel single-crystal composites have been successfully prepared. Diffuse reflectance spectra show a clear increase in the band gap of PbI2 after gel incorporation. The band gap is further increased through expanding the area of host/guest interfaces or enhancing the interatomic forces at the interfaces. The interatomic forces (electrostatic interaction) at the host/guest interfaces are attributed to this band gap shift. As such, this study provides a novel and facile way for band gap engineering by gel incorporation.

Graphical abstract: PbI2 band gap engineering by gel incorporation

Supplementary files

Article information

Article type
Research Article
Submitted
05 11月 2017
Accepted
14 12月 2017
First published
15 12月 2017

Mater. Chem. Front., 2018,2, 362-368

PbI2 band gap engineering by gel incorporation

C. Hu, T. Ye, Y. Liu, J. Ren, X. Jin, H. Chen and H. Li, Mater. Chem. Front., 2018, 2, 362 DOI: 10.1039/C7QM00509A

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