Issue 41, 2018

Room temperature precipitated dual phase CsPbBr3–CsPb2Br5 nanocrystals for stable perovskite light emitting diodes

Abstract

Although the efficiency of metal halide perovskite light emitting diodes (PeLEDs) has been improved to an attractive level, the poor stability of perovskite emitting layers is a major concern for the application of PeLEDs. Herein, we report a facile ligand-assisted precipitation synthesis of stable dual-phase CsPbBr3–CsPb2Br5 nanocrystals (NCs) for improving the stability of PeLEDs. In our synthetic process, the bromide-rich circumstance is beneficial to generate high quality dual-phase perovskite NCs with PLQY as high as 92% and a narrow emission linewidth (19 nm). More importantly, as-synthesized dual phase perovskite NCs exhibit extremely high thermal stability in heating tests in air with a considerable humidity of 30%–55% in comparison with previously reported single phase CsPbBr3 NCs. The aforementioned advantages of our synthesized dual-phase CsPbBr3–CsPb2Br5 NCs allow for the fabrication of light emitting layers of PeLEDs under ambient conditions. The fabricated green PeLED based on CsPbBr3–CsPb2Br5 NCs shows a low turn-on voltage of 2.5 V and a high brightness of 8383 cd m−2 at 8 V. Owing to the high stability of dual-phase CsPbBr3–CsPb2Br5 NCs, the fabricated PeLED also exhibits better operational stability in comparison with those PeLEDs based on single phase CsPbBr3 NCs. Our work presents a new route to fabricate stable perovskite light-emitting diodes using room temperature precipitated dual-phase CsPbBr3–CsPb2Br5 NCs as emitting layer materials.

Graphical abstract: Room temperature precipitated dual phase CsPbBr3–CsPb2Br5 nanocrystals for stable perovskite light emitting diodes

Supplementary files

Article information

Article type
Communication
Submitted
25 8月 2018
Accepted
30 9月 2018
First published
02 10月 2018

Nanoscale, 2018,10, 19262-19271

Room temperature precipitated dual phase CsPbBr3–CsPb2Br5 nanocrystals for stable perovskite light emitting diodes

B. Zhu, H. Li, J. Ge, H. Li, Y. Yin, K. Wang, C. Chen, J. Yao, Q. Zhang and H. Yao, Nanoscale, 2018, 10, 19262 DOI: 10.1039/C8NR06879H

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