Issue 4, 2016

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Abstract

We use silicon quantum dots (SiQDs) with an average diameter of 2.6 ± 0.5 nm as the light emitting material and fabricate inverted structure light emitting diodes (SiQD-LEDs) with bottom cathodes. ZnO nanoparticles with high electron mobility, a deep valence band edge, and robust features to resist dissolving by the SiQD solvent were used as the electron transport layer. 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) with high hole transport mobility and a high lowest unoccupied molecular orbital level was used as the hole transport layer. Poly(ethylene imine) (PEI) modified indium-tin oxide (ITO) was used as the low work function (∼3.1 eV) cathode and MoO3/Al as the high work function anode. Electroluminescence of the SiQD-LEDs is mainly from the SiQDs with a peak located at ∼700 nm. The maximum external quantum efficiencies of the SiQD-LEDs are 2.7%.

Graphical abstract: Efficient silicon quantum dots light emitting diodes with an inverted device structure

Article information

Article type
Paper
Submitted
25 9月 2015
Accepted
27 10月 2015
First published
12 11月 2015

J. Mater. Chem. C, 2016,4, 673-677

Efficient silicon quantum dots light emitting diodes with an inverted device structure

L. Yao, T. Yu, L. Ba, H. Meng, X. Fang, Y. Wang, L. Li, X. Rong, S. Wang, X. Wang, G. Ran, X. Pi and G. Qin, J. Mater. Chem. C, 2016, 4, 673 DOI: 10.1039/C5TC03064A

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