Issue 4, 2015

Origin of the increased open circuit voltage in PbS–CdS core–shell quantum dot solar cells

Abstract

Lead sulfide quantum dots (PbS QDs) show great potential for efficient, low cost photovoltaic applications. Currently, device efficiencies are limited by the high density of trap states caused by lattice imperfections on the QD surface. Introducing a thin shell of a wide bandgap semiconductor to the QD surface is a promising method to passivate these trap states. Here we demonstrate solar cells made from PbS–CdS core–shell QDs, yielding a 147 mV increase in VOC compared to core only PbS QDs. We explore the physical reason for this enhancement and demonstrate that it is indeed caused by improved passivation of the PbS surface by the CdS shell, leading to a lower electron trap density.

Graphical abstract: Origin of the increased open circuit voltage in PbS–CdS core–shell quantum dot solar cells

Supplementary files

Article information

Article type
Paper
Submitted
12 9月 2014
Accepted
27 10月 2014
First published
29 10月 2014

J. Mater. Chem. A, 2015,3, 1450-1457

Author version available

Origin of the increased open circuit voltage in PbS–CdS core–shell quantum dot solar cells

M. J. Speirs, D. M. Balazs, H.-H. Fang, L.-H. Lai, L. Protesescu, M. V. Kovalenko and M. A. Loi, J. Mater. Chem. A, 2015, 3, 1450 DOI: 10.1039/C4TA04785K

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