Issue 28, 2018

Relationship between electron–phonon interaction and low-frequency Raman anisotropy in high-mobility organic semiconductors

Abstract

Recent theoretical studies have shown that charge transport in high-mobility organic semiconductors is limited by low-frequency vibrations because of strong non-local electron–phonon interaction. Here we investigate two high-electron-mobility organic semiconductors with similar molecular structures but considerably different crystal packings, TCNQ and F2-TCNQ, and reveal the relationship between the experimental low-frequency Raman spectra and the calculated contributions of various vibrational modes to the electron–phonon interaction. We suggest that the combination of Raman spectroscopy with solid-state DFT is a powerful tool for probing electron–phonon interaction and focused search for high-mobility organic semiconductors.

Graphical abstract: Relationship between electron–phonon interaction and low-frequency Raman anisotropy in high-mobility organic semiconductors

Supplementary files

Article information

Article type
Communication
Submitted
21 5月 2018
Accepted
27 6月 2018
First published
27 6月 2018

Phys. Chem. Chem. Phys., 2018,20, 18912-18918

Relationship between electron–phonon interaction and low-frequency Raman anisotropy in high-mobility organic semiconductors

A. Yu. Sosorev, D. R. Maslennikov, I. Yu. Chernyshov, D. I. Dominskiy, V. V. Bruevich, M. V. Vener and D. Yu. Paraschuk, Phys. Chem. Chem. Phys., 2018, 20, 18912 DOI: 10.1039/C8CP03232G

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