Large scale ZrS2 atomically thin layers

Abstract

We present the scalable synthesis of large scale (up to 30 μm in lateral size), single-crystalline, atomically thin hexagonal ZrS₂ nanoflakes via an optimized chemical vapor deposition (CVD) method on traditional substrates (silica, sapphire). The Vienna ab initio simulation package (VASP) was employed to calculate the adhesion energy and provided an exact theoretical account for the substrate and temperature dependent growth process of ZrS₂ nanoflakes. Photodetectors based on ZrS₂ nanoflakes were fabricated and displayed a remarkable photoconductivity under visible light. Field-effect transistors based on ZrS₂ monolayers exhibited obvious n-type transport characteristics with relatively high mobility.