Issue 20, 2012

Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization

Abstract

Atomically thin molybdenum disulfide (MoS2) layers have attracted great interest due to their direct-gap property and potential applications in optoelectronics and energy harvesting. Meanwhile, they are extremely bendable, promising for applications in flexible electronics. However, the synthetic approach to obtain large-area MoS2 atomic thin layers is still lacking. Here we report that wafer-scale MoS2 thin layers can be obtained using MoO3 thin films as a starting material followed by a two-step thermal process, reduction of MoO3 at 500 °C in hydrogen and sulfurization at 1000 °C in the presence of sulfur. Spectroscopic, optical and electrical characterizations reveal that these films are polycrystalline and with semiconductor properties. The obtained MoS2 films are uniform in thickness and easily transferable to arbitrary substrates, which make such films suitable for flexible electronics or optoelectronics.

Graphical abstract: Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization

Supplementary files

Article information

Article type
Paper
Submitted
12 七月 2012
Accepted
26 八月 2012
First published
29 八月 2012

Nanoscale, 2012,4, 6637-6641

Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization

Y. Lin, W. Zhang, J. Huang, K. Liu, Y. Lee, C. Liang, C. Chu and L. Li, Nanoscale, 2012, 4, 6637 DOI: 10.1039/C2NR31833D

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