Issue 4, 2022

Polymer source-gated transistors with low saturation voltage

Abstract

A type of injection-limited transistor is demonstrated with a conjugated polymer semiconductor and fluoropolymer insulator. The source-gated transistor (SGT) is based on a source Schottky barrier, the effective height of which is controlled by the gate voltage, shifting the origin of current modulation from the channel to the source-semiconductor contact. SGTs fabricated in this work saturate at up to 30 times lower drain voltages than FETs at high gate voltages. Saturation in SGTs is retained for short channels without requiring downscaling of the insulator layer. As the transistor channel has reduced influence on current modulation, the SGT output current is only weakly dependent on the channel length contrary to traditional FETs. These features come at some current reduction due to the series resistance stemming from the source depletion region. The ability to function with thick insulators, low voltage operation and thus low power consumption, as well as the reduced sensitivity to channel length variations could be highly synergistic with printing techniques used to deposit materials in organic electronics.

Graphical abstract: Polymer source-gated transistors with low saturation voltage

Article information

Article type
Paper
Submitted
20 10月 2021
Accepted
13 12月 2021
First published
18 12月 2021
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2022,10, 1282-1288

Polymer source-gated transistors with low saturation voltage

S. Georgakopoulos, R. A. Sporea and M. Shkunov, J. Mater. Chem. C, 2022, 10, 1282 DOI: 10.1039/D1TC05070B

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