Issue 43, 2020

Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors

Abstract

We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ray diffraction reveals that the low-temperature phase is predominant at low shearing speed, while, upon increasing the speed, the high-tempertature phase prevails. The effect of polymorph composition on the electrical performances is reported with the best mobilities found in a mixture of the two polymorphs.

Graphical abstract: Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors

Supplementary files

Article information

Article type
Paper
Submitted
07 7月 2020
Accepted
28 8月 2020
First published
04 9月 2020
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2020,8, 15361-15367

Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors

T. Salzillo, N. Montes, R. Pfattner and M. Mas-Torrent, J. Mater. Chem. C, 2020, 8, 15361 DOI: 10.1039/D0TC03222K

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