Issue 46, 2018

A silicon nitride waveguide-integrated chemical vapor deposited graphene photodetector with 38 GHz bandwidth

Abstract

We demonstrate a high-speed chemical vapor deposited graphene-on-silicon nitride waveguide photodetector. The device is designed with grating-like metal contact to reduce the channel spacing. Benefiting from the narrow channel spacing, a calculated transit-time-limited bandwidth of 111 GHz is derived. The resistance–capacitance-limited bandwidth is also improved due to the small relative permittivity of silicon nitride. At a wavelength of 1550 nm, we measured an electro-optic bandwidth of 38 GHz under zero bias and an intrinsic responsivity of 13 mA W−1 at 0.1 V reverse bias with a 6 μm detection length.

Graphical abstract: A silicon nitride waveguide-integrated chemical vapor deposited graphene photodetector with 38 GHz bandwidth

Supplementary files

Article information

Article type
Paper
Submitted
24 4月 2018
Accepted
24 10月 2018
First published
24 10月 2018

Nanoscale, 2018,10, 21851-21856

A silicon nitride waveguide-integrated chemical vapor deposited graphene photodetector with 38 GHz bandwidth

Y. Gao, H. K. Tsang and C. Shu, Nanoscale, 2018, 10, 21851 DOI: 10.1039/C8NR03345E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements