Issue 47, 2018

Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD

Abstract

Selenium and sulfur derivatives of lead(II) acylchalcogourato complexes have been used to deposit PbSxSe1−x thin films by AACVD. By variation of the mole ratio of sulfur and selenium precursors in the aerosol feed solution the full range of compositions of PbSxSe1−x was obtained, i.e. 0 ≥ x ≥ 1. The films showed no contaminant phases demonstrating the potential for acylchalcogourato metal complexes as precursors for metal chalcogenide thin films. The crystal structure for bis[N,N-diethyl-N′-2-naphthoylthioureato]lead(II) was solved and displayed the expected decreases in Pb–E bond lengths from the previously reported selenium variant.

Graphical abstract: Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD

Supplementary files

Article information

Article type
Paper
Submitted
23 8月 2018
Accepted
26 9月 2018
First published
16 11月 2018
This article is Open Access
Creative Commons BY license

Dalton Trans., 2018,47, 16938-16943

Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(II) complexes as precursors for AACVD

T. E. Ezenwa, P. D. McNaughter, J. Raftery, D. J. Lewis and P. O'Brien, Dalton Trans., 2018, 47, 16938 DOI: 10.1039/C8DT03443E

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