Issue 46, 2019

Yttrium-doped CuSCN thin film transistor: synthesis and optoelectronic characterization study

Abstract

Highly efficient, solution-processable, transparent semiconductor thin films of yttrium-doped copper thiocyanate (Y(III)-CuSCN) have been developed using a simple and cost-effective modified spin coating method and investigated for their optical, electrical and electrochemical properties. The pure β-CuSCN pinhole-free compact thin films (40 nm thickness) showed ∼242 S cm−1 electrical conductivity with 0.97 root mean square surface roughness (Rrms) and an indirect bandgap of 3.72 eV. The 1 mole% Y(III)-CuSCN (65 nm thick) afforded an Rrms of 3.2 nm, with a narrowed bandgap of 3.46 eV and remarkably improved electrical conductivity of ∼566 S cm−1. Impedance studies indicated a flat-band potential of −5.19 eV and 65.3k Ω cm−2 as the interfacial charge transfer resistance for pure CuSCN. The values for the 1 mole% Y(III)-CuSCN were 14.13k Ω cm−2 for interfacial charge transport through the grains and 23.73k Ω cm−2via the grain boundaries. The hole mobility values for thin film transistor (TFT) devices were the highest among those reported for CuSCN; they were recorded as ∼0.36 cm2 V−1 s−1 and ∼0.99 cm2 V−1 s−1 for the pure and Y-doped CuSCN materials, respectively, and the on/off ratio was ∼104.

Graphical abstract: Yttrium-doped CuSCN thin film transistor: synthesis and optoelectronic characterization study

Supplementary files

Article information

Article type
Paper
Submitted
30 9月 2019
Accepted
25 10月 2019
First published
29 10月 2019

J. Mater. Chem. C, 2019,7, 14543-14554

Yttrium-doped CuSCN thin film transistor: synthesis and optoelectronic characterization study

S. Baig, A. D. Hendsbee, P. Kumar, S. Ahmed and Y. Li, J. Mater. Chem. C, 2019, 7, 14543 DOI: 10.1039/C9TC05371A

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