Issue 21, 2024

Tuning the optoelectronic properties of emerging solar absorbers through cation disorder engineering

Abstract

Chalcogenide solar absorbers, such as AgBiS2 and kesterites, have gained a resurgence of interest recently, owing to their high stability compared to metal–halide compounds, as well as their rising efficiencies in photovoltaic devices. Although their optical and electronic properties are conventionally tuned through the composition and structure, cation disorder has increased in prominence as another important parameter that influences these properties. In this minireview, we define cation disorder as the occupation of a cation crystallographic site with different species, and the homogeneity of this cation disorder as how regular the alternation of species in this site is. We show that cation disorder is not necessarily detrimental, and can lead to increases in absorption coefficient and reductions in bandgap, enabling the development of ultrathin solar absorbers for lightweight photovoltaics. Focusing on kesterites and ABZ2 materials (where A = monovalent cation, B = divalent cation, and Z is a chalcogenide anion), we discuss how the degree and homogeneity of cation disorder influences the optical properties, charge-carrier transport and photovoltaic performance of these materials, as well as how cation disorder could be tuned and quantified. We finish with our perspectives on the important questions moving forward in making use of cation disorder engineering as a route to achieve more efficient solar absorbers.

Graphical abstract: Tuning the optoelectronic properties of emerging solar absorbers through cation disorder engineering

Article information

Article type
Minireview
Submitted
16 3月 2024
Accepted
02 5月 2024
First published
02 5月 2024
This article is Open Access
Creative Commons BY license

Nanoscale, 2024,16, 10155-10167

Tuning the optoelectronic properties of emerging solar absorbers through cation disorder engineering

Y. Huang and R. L. Z. Hoye, Nanoscale, 2024, 16, 10155 DOI: 10.1039/D4NR01148A

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