Issue 39, 2022

Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Abstract

In this paper, we address the unique nature of fully textured, high surface-to-volume 3C-SiC films, as produced by intrinsic growth anisotropy, in turn generated by the high velocity of the stacking fault growth front in two-dimensional (111) platelets. Structural interpretation of high resolution scanning electron microscopy and transmission electron microscopy data is carried out for samples grown in a hot-wall low-pressure chemical vapour deposition reactor with trichlorosilane and ethylene precursors, under suitable deposition conditions. By correlating the morphology and the X-ray diffraction analysis we also point out that twinning along (111) planes is very frequent in such materials, which changes the free-platelet configuration.

Graphical abstract: Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Supplementary files

Article information

Article type
Paper
Submitted
15 7月 2022
Accepted
16 9月 2022
First published
19 9月 2022
This article is Open Access
Creative Commons BY license

Phys. Chem. Chem. Phys., 2022,24, 24487-24494

Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

G. M. Vanacore, D. Chrastina, E. Scalise, L. Barbisan, A. Ballabio, M. Mauceri, F. La Via, G. Capitani, D. Crippa, A. Marzegalli, R. Bergamaschini and L. Miglio, Phys. Chem. Chem. Phys., 2022, 24, 24487 DOI: 10.1039/D2CP03250C

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