Issue 39, 2022

Single charge control of localized excitons in heterostructures with ferroelectric thin films and two-dimensional transition metal dichalcogenides

Abstract

Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic doping method by applying metallic gates onto TMDCs may cause inhomogeneous charge distribution, optical quenching, and energy loss. Herein, by locally controlling the ferroelectric polarization of the ferroelectric thin film BiFeO3 (BFO) with a scanning probe, we can deterministically manipulate the doping type of monolayer WSe2 to achieve p-type and n-type doping. This nonvolatile approach can maintain the doping type and hold the localized excitonic charges for a long time without applied voltage. Our work demonstrated that the ferroelectric polarization of BFO can control the charges of LXs effectively. Neutral and charged LXs have been observed in different ferroelectric polarization regions, confirmed by magnetic optical measurement. Highly circular polarization degree with 90% photon emission from these quantum emitters was achieved in high magnetic fields. Controlling the single charge of LXs in a non-volatile way shows a great potential for deterministic photon emission with desired charge states for photonic long-term memory.

Graphical abstract: Single charge control of localized excitons in heterostructures with ferroelectric thin films and two-dimensional transition metal dichalcogenides

Supplementary files

Article information

Article type
Paper
Submitted
26 7月 2022
Accepted
20 9月 2022
First published
20 9月 2022

Nanoscale, 2022,14, 14537-14543

Single charge control of localized excitons in heterostructures with ferroelectric thin films and two-dimensional transition metal dichalcogenides

D. Dai, X. Wang, J. Yang, J. Dang, Y. Yuan, B. Fu, X. Xie, L. Yang, S. Xiao, S. Shi, S. Yan, R. Zhu, Z. Zuo, C. Wang, K. Jin, Q. Gong and X. Xu, Nanoscale, 2022, 14, 14537 DOI: 10.1039/D2NR04119G

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