Issue 47, 2021

Halogen bonding vs. π-stacking interactions in new bis(acenaphthylene)dione semiconductors

Abstract

We report a series of new halogenated bis(acenaphthylene)dione (BAN) derivatives and study the effect of their solid-state organization on optoelectronic properties and electron transport measured in n-type organic field-effect transistors (OFETs).

Graphical abstract: Halogen bonding vs. π-stacking interactions in new bis(acenaphthylene)dione semiconductors

Supplementary files

Article information

Article type
Communication
Submitted
08 8月 2021
Accepted
27 9月 2021
First published
11 10月 2021

CrystEngComm, 2021,23, 8255-8259

Halogen bonding vs. π-stacking interactions in new bis(acenaphthylene)dione semiconductors

Y. Liu, A. Dadvand, H. M. Titi, E. Hamzehpoor and D. F. Perepichka, CrystEngComm, 2021, 23, 8255 DOI: 10.1039/D1CE01047F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements