Volume 246, 2023

Effect of ionic conductivity of electrolyte on printed planar and vertical organic electrochemical transistors

Abstract

Conducting polymers with mixed electronic/ionic transport are attracting a great deal of interest for applications in organic electrochemical transistors (OECTs). Ions play a crucial role in OECT performance. The concentration and mobility of ions in the electrolyte influence the current flow in the OECT and its transconductance. This study examines the electrochemical properties and ionic conductivity of two semi-solid electrolytes, iongels, and organogels, with diverse ionic species and properties. Our results indicate that the organogels exhibited higher ionic conductivities than the iongels. Furthermore, the geometry of OECTs plays an important role in determining their transconductance. Thus, this study employs a novel approach for fabricating vertical-configuration OECTs with significantly shorter channel lengths planar devices. This is achieved through a printing method that offers advantages, such as design versatility, scalability, expedited production time, and reduced cost relative to traditional microfabrication methods. The transconductance values obtained for the vertical OECTs were significantly (approximately 50 times) higher than those of the planar devices because of their shorter channel lengths. Finally, the impact of different gating media on the performance of both planar and vertical OECTs was studied, and devices gated by organogels demonstrated improved transconductance and switching speed (almost two times higher) than those gated by iongels.

Graphical abstract: Effect of ionic conductivity of electrolyte on printed planar and vertical organic electrochemical transistors

Associated articles

Supplementary files

Article information

Article type
Paper
Submitted
11 3月 2023
Accepted
05 4月 2023
First published
06 4月 2023

Faraday Discuss., 2023,246, 540-555

Effect of ionic conductivity of electrolyte on printed planar and vertical organic electrochemical transistors

M. Azimi, C. Kim, J. Fan and F. Cicoira, Faraday Discuss., 2023, 246, 540 DOI: 10.1039/D3FD00065F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements