Issue 46, 2022

Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

Abstract

We demonstrate a novel electroluminescence device in which GaN-based μ-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the μ-LED surface. A special μ-LED design enables the operation of our structures even within the limit of low temperatures. A device equipped with a selected WSe2 monolayer flake is shown to act as a stand-alone, electrically driven single-photon source.

Graphical abstract: Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

Article information

Article type
Paper
Submitted
19 7月 2022
Accepted
09 11月 2022
First published
10 11月 2022

Nanoscale, 2022,14, 17271-17276

Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

K. Oreszczuk, J. Slawinska, A. Rodek, M. Potemski, C. Skierbiszewski and P. Kossacki, Nanoscale, 2022, 14, 17271 DOI: 10.1039/D2NR03970B

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