Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD

Abstract

Selenium and sulfur derivatives of lead(II) acylchalcogourato complexes have been used to deposit PbS_xSe_1−x thin films by AACVD. By variation of the mole ratio of sulfur and selenium precursors in the aerosol feed solution the full range of compositions of PbS_xSe_1−x was obtained, i.e. 0 ≥ x ≥ 1. The films showed no contaminant phases demonstrating the potential for acylchalcogourato metal complexes as precursors for metal chalcogenide thin films. The crystal structure for bis[N,N-diethyl-N′-2-naphthoylthioureato]lead(II) was solved and displayed the expected decreases in Pb–E bond lengths from the previously reported selenium variant.