Issue 10, 2023

Atomic layer deposition of SnO2 using hydrogen peroxide improves the efficiency and stability of perovskite solar cells

Abstract

Low-temperature processed SnO2 is a promising electron transporting layer in perovskite solar cells (PSCs) due to its optoelectronic advantage. Atomic layer deposition (ALD) is suitable for forming a conformal SnO2 layer on a high-haze substrate. However, oxygen vacancy formed by the conventional ALD process using H2O might have a detrimental effect on the efficiency and stability of PSCs. Here, we report on the photovoltaic performance and stability of PSCs based on the ALD-SnO2 layer with low oxygen vacancies fabricated via H2O2. Compared to the ALD-SnO2 layer formed using H2O vapors, the ALD-SnO2 layer prepared via H2O2 shows better electron extraction due to a reduced oxygen vacancy associated with the highly oxidizing nature of H2O2. As a result, the power conversion efficiency (PCE) is enhanced from 21.42% for H2O to 22.34% for H2O2 mainly due to an enhanced open-circuit voltage. Operational stability is simultaneously improved, where 89.3% of the initial PCE is maintained after 1000 h under an ambient condition for the H2O2-derived ALD SnO2 as compared to the control device maintaining 72.5% of the initial PCE.

Graphical abstract: Atomic layer deposition of SnO2 using hydrogen peroxide improves the efficiency and stability of perovskite solar cells

Supplementary files

Article information

Article type
Paper
Submitted
09 12月 2022
Accepted
03 2月 2023
First published
06 2月 2023

Nanoscale, 2023,15, 5044-5052

Atomic layer deposition of SnO2 using hydrogen peroxide improves the efficiency and stability of perovskite solar cells

S. Lee, H. Park, H. Shin and N. Park, Nanoscale, 2023, 15, 5044 DOI: 10.1039/D2NR06884B

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