Synthesis of 2D semiconducting single crystalline Bi2S3 for high performance electronics

Abstract

2-Dimensional (2D) semiconducting materials are attractive candidates for future electronic device applications due to the tunable bandgap, transparency, flexibility, and downscaling to the atomic level in material size and thickness. However, 2D materials have critical issues regarding van der Waals contact, interface instability and power consumption. In particular, the development of semiconducting electronics based on 2D materials is significantly hindered by a low charge-carrier mobility. In order to improve the critical shortcoming, diverse efforts have been made in synthesis and device engineering. Here, we propose a synthesis method of single crystalline 2D Bi₂S₃ by chemical vapor deposition for high performance electronic device applications. The ion-gel gated field effect transistor with the as-grown Bi₂S₃ on the SiO₂ substrate exhibits a high mobility of 100.4 cm² V⁻¹ S⁻¹ and an on–off current ratio of 104 under a low gate voltage below 4 V at room temperature without chemical doping and surface engineering. The superior performance is attributed to the high crystal quality of Bi₂S₃ that shows low sulfur vacancies and atomic ratio close to the ideal value (2 : 3) under a rich sulfur growth process using H₂S gas instead of sulfur powder. The synthesis method will provide a platform to realize high performance electronics and optoelectronics based on 2D semiconductors.