High-performance organic field-effect transistors based on organic single crystal microribbons fabricated by an in situ annealing method

Abstract

In situ fabrication of microribbon transistors has been considered an efficient and facile approach compared with normal solution method or physical vapor transport techniques, and could also prevent the introduction of impurities. Herein, the naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene derivative (NBTBT-6) with two alkoxy-side chains was used to fabricate single crystal microribbon-based transistors by in situ annealing of the NBTBT-6 thin films. Carrier mobilities of transistors based on the NBTBT-6 microribbons were one order of magnitude higher than those of thin film devices. Related characterizations of the NBTBT-6 microribbon showed its single crystalline structure with good directionality. Furthermore, the process of crystal formation is discussed.