Issue 32, 2023

Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

Abstract

Low-symmetric GeTe semiconductors have attracted wide-ranging attention due to their excellent optical and thermal properties, but only a few research studies are available on their in-plane optical anisotropic nature that is crucial for their applications in optoelectronic and thermoelectric devices. Here, we investigate the optical interactions of anisotropy in GeTe using polarization-resolved Raman spectroscopy and first-principles calculations. After determining both armchair and zigzag directions in GeTe crystals by transmission electron microscopy, we found that the Raman intensity of the two main vibrational modes had a strong in-plane anisotropic nature; the one at ∼88.1 cm−1 can be used to determine the crystal orientation, and the other at ∼124.6 cm−1 can reveal a series of temperature-dependent phase transitions. These results provide a general approach for the investigation of the anisotropy of light–matter interactions in low-symmetric layered materials, benefiting the design and application of optoelectronic, anisotropic thermoelectric, and phase-transition memory devices based on bulk GeTe.

Graphical abstract: Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

Supplementary files

Article information

Article type
Paper
Submitted
07 Чер 2023
Accepted
24 Лип 2023
First published
25 Лип 2023

Nanoscale, 2023,15, 13297-13303

Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

S. Yang, F. Sui, Y. Liu, R. Qi, X. Feng, S. Dong, P. Yang and F. Yue, Nanoscale, 2023, 15, 13297 DOI: 10.1039/D3NR02678G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements