Michele
Crozzolin
a,
Camilla
Belloni
a,
Jian
Xu
bc,
Takayuki
Nakanishi
d,
Jumpei
Ueda
e,
Setsuhisa
Tanabe
c,
Federico
Dallo
f,
Eleonora
Balliana
g,
Asia
Saorin
a,
Flavio
Rizzolio
ah,
Davide
Cristofori
a,
Pietro
Riello
a,
Alvise
Benedetti
a and
Michele
Back
*a
aDepartment of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155, 30172, Mestre – Venezia, Italy. E-mail: michele.back@unive.it
bInternational Center for Young Scientists (ICYS), National Institute of Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
cGraduate School of Global Environmental Studies, Kyoto University, Yoshida nihonmatsu-cho, Sakyo-ku, Kyoto 606-8501, Japan
dAdvanced Phosphor Group, National Institute of Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
eGraduate School of Advanced Science and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
fInstitute of Polar Sciences – National Research Council (ISP-CNR), Via Torino 155, 30172, Venezia-Mestre, Venice, Italy
gDepartment of Environmental Sciences, Informatics, Statistics, Ca’ Foscari University of Venice, Scientific Campus – Via Torino 155, 30170 Venezia Mestre, Italy
hPathology Unit, Department of Molecular Biology and Translational Research, Centro di Riferimento Oncologico di Aviano (CRO) IRCCS, via Franco Gallini 2, 33081 Aviano, Italy
First published on 18th June 2024
In recent years, Cr3+-activated phosphors have been attracting a lot of interest due to their unique optical features that can be exploited for applications ranging from lasers to optical thermometry, near-infrared (NIR) emitting phosphors for bioimaging and NIR-LEDs, to name a few. Despite the interesting optical properties shown by Cr3+-doped Ga2O3, investigations are limited only to β-Ga2O3 and α-Ga2O3 polymorphs. Using mesoporous silica particles with different pore sizes between 3 nm and 22 nm as nanoreactors, cubic γ-Ga2O3:Cr3+ spinel nanocrystals (NCs) are stabilized through confinement into the mesopores as confirmed by HR-TEM, XRPD and the photoluminescence spectral shape. A detailed spectroscopic investigation in the temperature range between 16 to 500 K allowed extrapolating the fundamental parameters in the framework of the Tanabe–Sugano diagram and comparing the values for Cr3+ in γ-Ga2O3 with the α- and β-phases. In addition, due to the confinement of the NCs into the silica structure, the phase transition to the β-phase, conventionally occurring at about 700 °C, is hindered up to 1000 °C, improving the stability of the γ-Ga2O3 phase.
Gallium oxide (Ga2O3) is emerging as one of the most important materials for a variety of technological applications.24 Ga2O3 is a semiconductor capable of adopting various crystallographic structures, with six different polymorphs known: the stable β-phase and five metastable phases α, γ, δ, ε, and κ.25,26 Among them, β-Ga2O3 has been demonstrated to be a promising host for Cr3+-activated phosphors27–31 and has been investigated for lasing,28 optical thermometry15 and pc-NIR LEDs.32 A detailed spectroscopic investigation on Cr3+ ions in the rhombohedral α-Ga2O3 phase was recently reported, showing a stronger crystal field with respect to β-Ga2O3.15 In addition, a corundum-type α-Ga2O3:Cr3+ system was also proposed as a pressure sensor.33 Al2O3–Ga2O3 and Sc2O3–Ga2O3 solid solutions were also deeply investigated as promising hosts for Cr3+ ions.34,35
The crystalline structure of the γ-Ga2O3 polymorph has been widely investigated and debated due to the complicated defect Fdm spinel structure.36–40 γ-Ga2O3 stabilization was also proved in glassy hosts41 showing photocatalytic and catalytic activity.42–44 The defects present in the γ-Ga2O3 spinel structure were exploited to develop size-tuneable luminescent nanocrystals45 and white-light-emitting nanophosphors when coupled through energy transfer with orange-red emitting organic dyes.46 Despite the interest in Ga2O3 polymorphs as hosts for luminescent centres, a detailed investigation on the Cr3+ optical properties in cubic γ-Ga2O3 is still missing.
In this study, we investigate the stabilization of Cr3+-doped γ-Ga2O3 nanocrystals (NCs) by taking advantage of the size effect in mesoporous silica particles (MSPs) of different pore sizes. The effects of the size and temperature were investigated by means of a series of physical chemical investigation using XRPD, SEM/HR-TEM, N2 physisorption and TG–DSC analyses. In addition, the photoluminescence (PL) spectral analysis of Cr3+ in the Ga2O3 NCs allowed a detailed spectroscopic investigation to probe the crystalline structure. The HR-TEM analysis confirmed the stabilization of the cubic γ-Ga2O3 spinel structure. Moreover, a detailed investigation of the photoluminescence (PL) and PL excitation (PLE) spectral analysis and the temperature dependence of the PL spectra led to a comparison of the spectroscopic feature of Cr3+ with respect to the β- and α-Ga2O3 polymorphs and to investigations into the effect of the crystal on the 3d3 electrons of Cr3+ in terms of a Tanabe–Sugano diagram and configurational coordinate diagram.
With the aim of investigating suitable sizes to stabilize the cubic γ-Ga2O3 phase, mesoporous silica particles with different mesopores were firstly synthesized as nanoreactors and subsequently the Cr3+-doped Ga2O3 nanocrystals were grown by means of an impregnation procedure followed by thermal treatment (Scheme 1).
MSPs characterized by five different average pore sizes were firstly prepared as shown in Fig. 1a (labelled as MSP_3.1, MSP_4.2, MSP_7.5, MSP_13.5 and MSP_22.4).
Fig. 1 (a) BJH pore size distribution of MSPs and (b)–(f) the corresponding representative FE-SEM images. |
Different synthetic procedures were employed to obtain access to MSPs characterized by different pore sizes. Spherical MSNs, with an average pore size of 3.1 nm (Fig. 1b), were obtained following the procedure proposed by Quiao et al.47 Spherical MCM-41 MSNs characterized by a pore size of 4.2 nm were prepared using n-hexane as the swelling agent (Fig. 1c). SBA-15 with average pores of 7.5 nm were synthesized using an aging process in an autoclave at 100 °C for 24 hours without the use of a swelling agent, while SBA-15 characterized by average pore sizes of 13.5 and 22.4 nm were prepared by using trimethylbenzene at different TMB/Pluronic P123 ratios as the swelling agent. The SBA-15 are characterized by typical hexagonal arranged pore structure morphology (Fig. 1d and Fig. S1a and b, ESI†). The conventional tubular shape is lost, and micrometer globular particles are stabilized when a TMB/Pluronic P123 ratio of 0.3:1 is employed (Fig. 1e and Fig. S1c and d, ESI†). Finally, mesocellular foam with average pore sizes of 22.4 nm were obtained for a TMB/Pluronic P123 ratio of 0.5:1 (Fig. 1f and Fig. S1e and f, ESI†). The shape evolution is driven by the TMB/Pluronic P123 ratio due to the effect of TMB on the surfactant packing parameter.48 TMB can be easily dissolved into the PPO core of P123 micelles increasing the volume of the hydrophobic part.49 This change directly influences the micelle shape, described through the geometric model introduced by Israelachvili50 by the packing factor P = V/(a0l), where V is the total volume of the hydrophobic surfactant chain, a0 the effective hydrophilic headgroup size and l is the kinetic surfactant tail length. When the TMB/Pluronic P123 ratio is high (P > 1), the need to decrease the micelle surface-to-volume ratio leads to micellar aggregates with reverse curvature being formed51 and a consequent change in the mesoporous silica structure to mesocellular foam is triggered.
The N2 physisorption analysis allows estimating the surface area using the BET technique (Table S1, ESI†) while the pore size distributions and pore volume of the different MSPs were determined using the BJH method (Fig. 1a and Table S1, ESI†). The N2 physisorption hysteresis curves of the MSP samples are shown in Fig. S2 (ESI†).
Subsequently, the MSPs were impregnated with Ga/Cr nitrate precursors using a wet impregnation method by fixing the Ga:Cr ratio to obtain a 0.5 at% doping of the Ga sites in the final target product (Ga1.99Cr0.01O3). After that, the system was thermally treated at 900 °C for 2 hours.
At this stage of the preparation, the XRPD pattern analysis of the samples, shown in Fig. 2a, independently from the pore size, show a pattern similar to that of the γ-Ga2O3 spinel reference, suggesting stabilization of the higher symmetric cubic structure. However, the broadening of the diffraction peaks due to the small crystallites and the amorphous contribution of the MSPs make the assignment not unambiguous.
The effectiveness of the impregnation method is demonstrated by the elemental map of Ga inside the MSPs by means of EDX analysis. As shown in Fig. 2b on the Ga2O3:Cr3+@MSP_7.5 sample, as an example, Ga is homogeneously distributed inside the MSPs. In addition, the EDX spectrum allows us to confirm the Si, Ga and Cr elements are present in the particles. The elemental maps of Ga, Si and O confirmed the effectiveness of the impregnation irrespective to the pore size as evidenced for instance by the elemental maps for Ga2O3@MSP_4.2, Ga2O3@MSP_7.5 and Ga2O3@MSP_13.5 reported in Fig. S3–S5 (ESI†).
To shed light on the phase assignment, Cr3+ ions can be used as a structural probe. Indeed, the strong effect of the environment on the optical properties of the 3d3 electrons of Cr3+ can be used to probe the stabilized polymorphs. In this way, bulk monoclinic β-Ga2O3:Cr3+ was prepared as a reference. The photoluminescence (PL) spectra of Ga2O3:Cr3+ nanocrystals in Fig. 3a reveal an unexpected behavior showing the stabilization of the γ-Ga2O3 spinel phase for NCs of 7.5 and 13.5 nm, confirming the XRPD analysis, while at smaller sizes the stable monoclinic β-phase is detected. The PL spectrum of the 22.4 nm sample shows the spectral feature of both the β-phase and γ-phase, suggesting a mixture of the polymorphs. Irrespective of the stabilized phase, the integrated PL area increases linearly with the size of the NCs (Fig. 3b) evidencing a major role played by the size on the quenching behavior.
Fig. 3c summarizes the results of the Ga2O3 polymorph stabilization into the mesoporous channels with different size ranges. The stabilization of the cubic γ-Ga2O3 phase can be explain by considering the complex interplay between surface energy and bulk thermodynamic stability along with synthesis conditions. The order of phase stability (based on the formation free energy) for the Ga2O3 polymorphs is β > κ > α > δ > γ.52,53 However, at the nanoscale, the surface to volume ratio increases leading the surface energy playing a significant role in the total energy. On the other hand, high-symmetry phases tend to have lower surface energy making the γ-phase more favorable at small sizes. The stabilization of higher symmetric structures with the decreasing of the size was already demonstrated for many partially covalent compounds such as CdSe,54,55 ZrO2,56 YPO4, BaTiO3, Al2O3, Fe2O3, PbTiO3, PbZrO3, and Bi2CaSr2Cu2O8,57 to name a few. With reduction in particle size, a unit cell expansion up to phase transition was demonstrated for these materials, showing an effect similar to the application of a negative pressure.57
The stabilization of the β-Ga2O3 phase for a size smaller than 4.2 nm confirms the results reported by Fang et al.58 and it could be explained considering that the kinetic barriers that need to be overcome to stabilize different polymorphs can be strongly altered by stress and strain, promoting or hindering the stabilization of metastable polymorphs. The same effect of size dependence stabilization of the γ- and β-phase was also recently demonstrated for ultrathin Ga2O3 nanowires by Wang et al.,59 suggesting that positive or negative strains could inhibit the phase transition to the γ-phase at very small sizes. For sizes larger than about 22 nm, the β-Ga2O3 polymorph is again the more thermodynamically favored.
The sample at 7.5 nm was selected as representative of the cubic γ-Ga2O3:Cr3+. As evidenced in Fig. S2 (ESI†) and Fig. 1a, the MSP_7.5 sample is characterized by a type H1 hysteresis loop (IUPAC60) typical of the SBA-15 and a narrow pore size distribution. The XRPD patterns at low angles of the bare MSP_7.5 show the characteristic reflections of the (100), (110) and (200) planes of the p6mm hexagonally arranged cylindrical pores61,62 (Fig. 4a). The well resolved peaks indicate the high degree of hexagonal mesoscopic organization. The intense (100) peak reflects a d spacing of 94 Å, corresponding to a large unit cell parameter a = 10.9 nm. After the Ga2O3 NCs growth into the MSP channels at 900 °C, the p6mm morphology is preserved but the peaks appear at larger 2θ values, with d(100) = 98 Å and a = 9.8 nm. Fig. 4b shows the XRPD at higher angles of the bare SBA-15 MSPs, the SBA-15 MSPs filled with the Ga2O3:Cr3+ nanocrystals after the thermal treatment at 900 °C and the Ga2O3:Cr3+ nanocrystals after the MSP etching by NaOH. Comparison with the Ga2O3 polymorph references evidences the stabilization of the cubic γ-phase. In addition, the theoretical amount of Cr doping was confirmed using ICP-OES analysis. The estimated Ga:Cr = 28.62:0.18 shows a doping content of 0.6 at%, in good agreement with the theoretical value of 0.5% of the Ga sites (Ga1.99Cr0.01O3).
The TEM image of the mesoporous silica MSP_7.5 (Fig. 4c) shows the well-organized mesopores, as expected by the pore distribution (Fig. 1a) and the XRPD at low angles (Fig. 4a). Fig. 4d and e and Fig. S6 (ESI†) show the HR-TEM images of the Ga2O3 NCs grown into the mesopores of the MSP_7.5 after the etching process. The HR-TEM analysis (Fig. 4e) provides additional evidence of the stabilization of the cubic γ-Ga2O3 polymorph. The images confirm the high crystalline nature of the Ga2O3 NCs and the investigation of the d-spacing of the families of planes evidenced in the HR-TEM images are unambiguously assigned to the (311), (222), and (422) crystal planes, characteristic of the cubic γ-Ga2O3 polymorph (Table S2, ESI†). The very narrow size distribution of the NCs estimated by TEM (numerical distribution, N(D)dD) shows a mean value of 6.9 ± 1.0 nm in good agreement with the pore size distribution obtained using the BJH method (volumetric distribution, V(D)dD also in this case vary narrow) confirming the stabilization of the γ-Ga2O3 NCs inside the pores of the MSP_7.5 (Fig. 4f). Assuming that the average pore length L is independent of the pore diameter, the two distributions are correlated by ,63 and the N(D) obtained by TEM is compared with V(D)/D2 obtained by BJH.
It is worth noting that if the silica is etched from the Ga2O3@MSP system without the use of an ultrasonic bath, this nanocasting method leads to a mesoporous γ-Ga2O3 replica of the SBA-15 (see Fig. S7, ESI†) with potential applications as a support for nanocatalysts or directly as a mesoporous catalyst itself.42,43
The cubic γ-Ga2O3 spinel phase is well known to undergo a phase transition to the β-phase at high temperature.39,64,65 In order to investigate the effect of the silica structure on the phase stability, the effect of thermal treatment at 1000 °C was studied by comparing the results of TG–DSC analysis with the XRPD and the PL spectral shape after the annealing.
The TG–DSC analysis on the γ-Ga2O3:Cr3+@MSP_7.5 system (Fig. S8, ESI†) evidences the lack of phase transitions in the range explored, up to 1000 °C and the thermal stability of the system. This is also confirmed by the XRPD analysis and the comparison of the PL spectra of the sample after the treatment. As clearly visible in Fig. 5a and b, the γ-phase is kept, suggesting that the phase transformation from γ to β recorded by Castro-Fernandez et al.39 at 550–750 °C for nanocrystals of about 2.5 nm is influenced by the size. Moreover, the silica structure can also play an important role. However, the stability of the γ-Ga2O3 spinel structure up to 1000 °C could be very important for instance for applications in high temperature catalysis.
(1) |
(2) |
(3) |
The PL decay curve of the spin-allowed 4T2 → 4A2 transition of the γ-Ga2O3:Cr3+ NCs evidences a double-exponential behavior (fitted by , where τi and Ai are the decay times and the corresponding amplitudes of the decay components) with an average decay time τave = (A1τ12 + A2τ22)/(A1τ1 + A2τ2) of 40 μs. The behaviour of the decay curve may be explained by considering the difference between the crystallographic sites in the core and the surface of the spinel NCs. In fact, for many oxide nanocrystals, it has been demonstrated that decreasing the size leads to a negative pressure at the surface, resulting in a deformation of the unit cell with a relative expansion with respect to the “bulk” core (e.g. MgO, CeO2, Co3O4, Fe3O4, Cu2O, Y2O3 and BaTiO367–71); stronger bonding at the core and a relaxation at the surface.71,72 Therefore, Cr3+ ions could be stabilized in two slightly different octahedral sites of the same γ-phase, at the core and the surface of the NCs, reflecting the bi-exponential behaviour of the decay curve. However, the lifetime estimated is consistent with the conventional microsecond lifetimes of the 4T2 excited state of Cr3+ ions. It is worth noting that recently, Zhao et al. reported a persistent luminescence behaviour in γ-Ga2O3:Cr3+ by co-doping with Ba2+.73
To fairly compare the effect of the environment of different compounds on the Cr3+ electrons, the Tanabe–Sugano diagram calculated for a specific C/B should be considered. To calculate the Racah parameter C, the 2E transition is necessary. However, it is not clearly visible in the RT spectra. The low temperature PL spectrum was measured at 16 K (Fig. 7a). The peaks at 14500 cm−1 and 14365 cm−1 were assigned to the 4T2 zero phonon line (ZPL) and the 2E, respectively (Fig. 7b). With the R-line value, the C parameter was calculated to be 3035 cm−1 and C/B = 4.21. Fig. 7c shows the Tanabe–Sugano diagram calculated for the specific C/B value.
Fig. S9 (ESI†) shows a comparison of the PL and PLE spectra of Cr3+ in the γ-Ga2O3, β-Ga2O3 and α-Ga2O3 polymorphs, while Table 1 summarizes the main parameters estimated.
By considering the γ-Ga2O3 spinel structure characterized by the cubic FdmZ space group reported by Zinkevich et al.36 (ICDS#152085), a single GaO6 octahedral site with an average 〈Ga–O〉 bond length of 2.0595 Å is present. The trends of the Dq/B parameter along with the Racah parameters B and C and therefore C/B can be explained taking into account the difference in the average 〈Ga–O〉 bond length of the octahedral site of the polymorphs. The weaker the bond (larger average 〈Ga–O〉) the larger the parameter B and the smaller Dq/B and C/B.
The temperature dependence of the PL spectra was investigated in the 16–500 K range (Fig. 8a). The integrated PL intensity as a function of temperature cannot be reproduced by the simple crossover quenching process described by the Struck and Fonger model.74 As for the case of Eu2+-75,76 or Bi3+-doped77 phosphors, a double quenching barrier model is employed:
(4) |
Fig. 8 (a) Temperature dependence of the PL emission spectra of γ-Ga2O3:Cr3+ NCs from 16 to 500 K (T). (b) Temperature dependence of the integrated PL intensity (black dots) and fit (red curve). (c) Configurational coordinate diagram constructed by using eqn (5)–(7). |
The two energy barriers can be associated with 2E → 4A2 (ΔE1) and 4T2 → 4A2 (ΔE2) thermal quenching at lower and higher temperatures, respectively. From the fitting curve, the ΔE1 activation energy was estimated to be 83 ± 11 cm−1, in agreement with the small energy difference between the 2E and the 4T2 ZPL (∼135 cm−1) evidenced in Fig. 8b. On the other hand, a value of 1590 ± 63 cm−1 was estimated for the ΔE2 activation energy related to the 4T2 → 4A2 thermal quenching.
In addition, the temperature at which the intensity of the 4T2 → 4A2 transition becomes 50% of that at low temperature, T50, is estimated to be 415 K. Comparing this value with those estimated for the α-Ga2O3:Cr3+ (580 K15) and β-Ga2O3:Cr3+ (480 K15) polymorphs, a clear trend is evidenced. Indeed, the larger the average 〈Ga–O〉 bond length of the octahedral site, the lower the T50.
The energetic distance ΔE′ between 4T2 and 2E electronic manifolds obtained for a fixed position of ligand ions at the minimum energy of the 2E parabola can be calculated as the sum of the energy difference ΔE between the minimum energy of the 4T2 and 2E states and the Sħω = EStokes/2 energy: ΔE′ = E0T − E0E = ΔE + Sħω.78 By considering this lattice relaxation energy Sħω, in the framework of the perturbation approach and adiabatic approximation,9,78 the configurational coordinate diagram is depicted in Fig. 8c by describing the ground state 4A2 and the excited states 2E and 4T2 as single parabolic potential curves79
(5) |
(6) |
(7) |
The configurational coordinate diagram confirms the very close position between the 2E and the 4T2 states, in agreement with the Tanabe–Sugano diagram. In addition, the PL spectral features of Cr3+ in the three polymorphs shown in Fig. S9 (ESI†) can be explained through the effect of the crystal field on the 3d3 electrons of Cr3+: the weaker crystal field in γ-Ga2O3 (Dq/B = 2.20) leads to the emission only from 4T2, while the intermediate crystal field in β-Ga2O3 (Dq/B = 2.58) and the stronger field in α-Ga2O3 (Dq/B = 2.97) lead to emissions from both the 4T2 and 2E states, with a relative increase in the spin-forbidden 2E → 4A2 sharp line with respect to the spin-allowed 4T2 → 4A2 broadband as the crystal field increases. This trend can also be understood by considering the average 〈Ga–O〉 bond length of the octahedral GaO6 sites in the three polymorphs reported in Table 1 (the larger the average 〈Ga–O〉, the smaller the Dq/B), in agreement with the multiplet energy level diagram as a function of Cr–O bond length calculated by Ogasawara et al.80 However, while the shift to a weaker crystal field in the Ga2O3 polymorphs leads to a red shift in the spin-allowed 4T2 → 4A2 transition, its thermal quenching becomes more severe, being characterized by a smaller T50.
All the chemicals were of reagent grade and used without further purification.
To prepare MSPs with pores a little larger (MSP_4.2), the procedure described by Ma et al.81 was followed. After solubilization of 0.8 g of CTABr and 3 mL of NaOH 2M in 400 mL of MilliQ water at room temperature, 60 mL of the swelling agent n-hexane was added. After 15 minutes of stirring, the mixture was stopped; then, 4 mL of TEOS were added after separation of the phases. The mixture was stirred again for 5 hours, filtered, washed several times with MeOH and dried at 60 °C overnight. MSNs were then ground in a mortar and calcined at 550 °C, with a rate of 2 °C min−1 for 5 hours.
SBA-15 MSPs with different pore size (MSP_7.5, MSP_13.5 and MSP_22.4) were synthesized following the procedures described in Zhao et al.61,82 and Cao.83 This synthesis was carried out in a 250 mL jacketed flask thermostat at 35 °C. The preparation takes place by dissolving 4 g of Pluronic P123 block copolymer (polyethylene oxide (EO) – polypropylene oxide (PO) – polyethylene oxide (EO) of formula EO20PO70EO20) in 30 mL of milliQ water and 116.5 mL of HCl 2M. At this point, for MSP_13.5 and MSP_22.4, the swelling agent trimethylbenzene (TMB) was added in 0.3:1 and 0.5:1 w/w ratios, respectively. After 30 minutes, 9 mL of TEOS were added with sustained dripping; then the whole mixture was left to react for 20 hours. The suspension was then placed in hermetically sealed Teflon containers in autoclaves for an aging process in an oven at 100 °C for 24 hours. After cooling to room temperature, the MSNs were washed with deionized water until the pH was neutralized. The last washing was carried out in ethanol. They were then placed in an oven at 100 °C for 6 hours in order to evaporate all the solvent and then calcined in a muffle furnace at 550 °C.
Size and morphology determination of the nanoparticles and EDS analysis were carried out with a Carl Zeiss Sigma VP Field Emission Scanning Electron Microscope (FE-SEM) equipped with a Bruker Quantax 200 microanalysis detector, with an accelerating voltage from 5 to 20 kV.
The TEM images were taken at 300 kV with a JEOL 3010 instrument with an ultrahigh resolution (UHR) pole-piece (0.17 nm point resolution), equipped with a Gatan slow-scan CCD camera (model 794) and an Oxford Instrument EDS microanalysis detector (model 6636). The powdered samples were dispersed in isopropyl alcohol solution by sonication and then deposited onto a holey carbon film.
Nitrogen adsorption–desorption isotherms were collected at liquid nitrogen temperature using a Micrometrics ASAP 2010 system. Each sample was degassed at 130 °C overnight before the measurements. The Brunauer–Emmett–Teller (BET) equation was used to calculate the specific surface area from the adsorption data and the Barrett–Joyner–Halenda (BJH) model was used to estimate the pore-size distribution from the adsorption branches of the isotherms.
The determination of gallium (Ga) and chromium (Cr) concentrations was conducted using Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES). In the procedure, approximately 10 mg of the sample was transferred into a 50 mL polypropylene (PP) tube. The sample was then subjected to mineralization with 20 mL of aqua regia (a mixture of ultra-pure hydrochloric acid and nitric acid in a 3:1 volume ratio) through sonication for 2 hours at 25 °C, using a frequency of 40 kHz at 80% intensity (CP104 model from CEIA, Arezzo). This step was followed by mechanical stirring overnight at 100 rpm (VDRL 711 Opto-lab, Modena). Subsequently, the mineralized sample was diluted to a final volume of 50 mL using Milli-Q water (with a resistivity of 18 MΩ cm) and stored at 4 °C. Prior to analysis, the sample was further diluted twofold with Milli-Q water. Alongside the samples, a procedural blank was also prepared for comparison. The analysis itself was performed on an iCAP 7000 Plus instrument (Thermo Scientific, Bremen), which is equipped with a glass concentric nebulizer and a cyclonic spray chamber made of glass. The detection of Ga and Cr was executed in axial mode, targeting their emission lines at 283.563 nm and 294.364 nm, respectively. Quantification of these elements was achieved through external calibration using mono-elemental standard solutions (provided by UltraScientific, Milan). Five replicates of blanks, standards, and sample measurements were taken and averaged.
Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) have been performed with a Netzsch STA 409C in air from 30 to 1000 °C at a heating rate of 10 °C min−1. The instrument was purged with a mixture of air and N2 at a 40 mL min−1 flow rate. The analysis was performed with an alumina crucible for compatibility. Alumina was used for internal calibration. Three replicates were performed for each sample. Data were collected with STA Netzsch software.
Time-resolved PL measurements were carried out under excitation at 445 nm using a pulsed SpectraLED (Horiba Scientific) through the Fluorolog-Time Correlated Single Photon Counting system.
The temperature dependence of PL spectra (16–500 K) was investigated with a cryostat (Janis ST-500, Lake Shore Cryotronics., Inc.), exciting with a 450 nm LD and collecting using a Hamamatsu PMA-12 CCD (C10027-02). All the spectra were calibrated using a standard halogen lamp (DH-2000CAL, Ocean Optics) to obtain spectra in the photon flux scale. In addition, the photon flux per constant wavelength interval function, ϕ(λ), is converted to photon flux per energy interval by using the Jacobian transformation.
The authors acknowledge Mr Tiziano Finotto and Dr Martina Marchiori for the XRPD and absorption/desorption measurements, respectively.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d4tc01386g |
This journal is © The Royal Society of Chemistry 2024 |