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Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy

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2D–3D heterointerface regulation of van der Waals epitaxy of AlN on graphene for wafer-scale exfoliation

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Applied Physics Letters, 2026, 128
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On the Possibility of Realizing a 2D Structure of Si─N Bonds by Metal‐Organic Chemical Vapor Deposition

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Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates

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Applied Physics Letters, 2023, 123
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Orientation Disparity in GaN/Graphene/m-Plane Sapphire: Control-Based Re-Examination of Thru-Hole Epitaxy

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Wafer‐Scale Manufacturing and Crack‐Free Transferring of GaN‐Based Membranes for Flexible Optoelectronics

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Advanced Science, 2025, 12
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Graphene-enabled strain modulation of 4-inch strippable GaN films for wavelength-stable red light-emitting diodes

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Nano Energy, 2026, 147, 111614
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Graphene‐Assisted Epitaxy of High‐Quality GaN Films on GaN Templates

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Advanced Optical Materials, 2022, 10
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Atomic layer-by-layer etching of graphene directly grown on SrTiO3 substrates for high-yield remote epitaxy and lift-off

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APL Materials, 2022, 10
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Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device

Yang Chen, Zhiming Shi, Shanli Zhang, Yuanyuan Yue, Hang Zang, Jianwei Ben, Ke Jiang, Yuping Jia, Xiaojuan Sun and Dabing Li

ACS Appl. Mater. Interfaces, 2023, 15, 31954
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Van der Waals Epitaxy of High‐Quality Transition Metal Dichalcogenides on Single‐Crystal Hexagonal Boron Nitride

Jidong Huang, Junhua Meng, Huabo Yang, Ji Jiang, Zhengchang Xia, Siyu Zhang, Libin Zeng, Zhigang Yin and Xingwang Zhang

Small Methods, 2025, 9
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Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene

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ACS Appl. Mater. Interfaces, 2022, 14, 2263
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Advances in GaN‐on‐Glass for Optoelectronic Devices: Progress in Epitaxial Growth, Device Integration, and Applications

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Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

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Adv Funct Materials, 2023, 33
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Epitaxy Beyond Periodic Lattices: Interfacial Modulation Enabled by Defect State 2D Materials

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Advanced Materials, 2026
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Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes

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ACS Appl. Mater. Interfaces, 2023, 15, 23501
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Roles of Nanoscale Defects of Graphene in Remote Epitaxy of GaN

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Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

Fang Liu, Tao Wang, Zhihong Zhang, Tong Shen, Xin Rong, Bowen Sheng, Liuyun Yang, Duo Li, Jiaqi Wei, Shanshan Sheng, Xingguang Li, Zhaoying Chen, Renchun Tao, Ye Yuan, Xuelin Yang, Fujun Xu, Jingmin Zhang, Kaihui Liu, Xin‐Zheng Li, Bo Shen and Xinqiang Wang

Advanced Materials, 2022, 34
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Structural, electronic, and transport properties of Janus GaInX 2 (X = S, Se, Te) monolayers: first-principles study

Tuan V Vu, Tran P T Linh, Huynh V Phuc, C A Duque, A I Kartamyshev and Nguyen N Hieu

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Van Der Waals Integration of 4‐Inch Single‐Crystalline III‐Nitride Semiconductors

Yao Wen, Jing Ning, Haidi Wu, Haoran Zhang, Ruiqing Cheng, Lei Yin, Hao Wang, Xiaolin Zhang, Yong Liu, Dong Wang, Yue Hao, Jincheng Zhang and Jun He

Advanced Materials, 2025, 37
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Interfacial-Modulated Lattice-Polarity-Controlled Quasi-van der Waals Epitaxy of AIN Film

Yiwei Duo, Lulu Wang, Zhetong Liu, Fan Zhou, Shenyuan Yang, Renfeng Chen, Yaqi Gao, Junxue Ran, Jiankun Yang, Junxi Wang, Peng Gao, Jinmin Li, Yanfeng Zhang and Tongbo Wei

ACS Appl. Mater. Interfaces, 2025
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2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy

Hoe-Min Kwak, Jongil Kim, Je-Sung Lee, Jeongwoon Kim, Jaeyoung Baik, Soo-Young Choi, Sunwoo Shin, Jin-Soo Kim, Seung-Hyun Mun, Kyung-Pil Kim, Sang Ho Oh and Dong-Seon Lee

ACS Appl. Mater. Interfaces, 2023, 15, 59025
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Magnetic and electronic properties of Janus CrXO (X=S, Se and Te) monolayer: First-principles and Monte Carlo simulations

Mohamed Ait Tamerd, Adil Marjaoui, Mohamed Zanouni, Mimoun El Marssi, Mustapha Jouiad and Abdelilah Lahmar

Computational Condensed Matter, 2023, 36, e00825
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Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

Jongho Ji, Hoe-Min Kwak, Jimyeong Yu, Sangwoo Park, Jeong-Hwan Park, Hyunsoo Kim, Seokgi Kim, Sungkyu Kim, Dong-Seon Lee and Hyun S. Kum

Nano Convergence, 2023, 10
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The essential difference between remote epitaxy and van der Waals epitaxy: Long-range orbital hybridization at the GaN/graphene/AlN interface

Yipu Qu, Yu Xu, Yuning Wang, Jianfeng Wang, Lin Shi, Bing Cao and Ke Xu

Journal of Crystal Growth, 2023, 609, 127073
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Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

Fang Liu, Tao Wang, Xin Gao, Huaiyuan Yang, Zhihong Zhang, Yucheng Guo, Ye Yuan, Zhen Huang, Jilin Tang, Bowen Sheng, Zhaoying Chen, Kaihui Liu, Bo Shen, Xin-Zheng Li, Hailin Peng and Xinqiang Wang

Sci. Adv., 2023, 9
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III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration

Renfeng Chen, Yijian Song, Rui He, Junxi Wang, Jinmin Li and Tongbo Wei

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Transferrable van der Waals epitaxy of AlN on h-BN for flexible vacuum ultraviolet photodetection

Yiwei Duo, Lulu Wang, Fan Zhou, Renfeng Chen, Jingnan Dong, Jiankun Yang, Junxue Ran, Junxi Wang, Yanfeng Zhang and Tongbo Wei

Applied Physics Letters, 2026, 128
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Layer-by-Layer Connection for Large Area Single Crystal Boron Nitride Multilayer Films

Hui Shi, Mingyuan Wang, Hongying Chen, Adrien Rousseau, Junpeng Shu, Ming Tian, Ruowang Chen, Juliette Plo, Pierre Valvin, Bernard Gil, Jiajie Qi, Qinghe Wang, Kaihui Liu, Mingliang Zhang, Guillaume Cassabois, Di Wu and Neng Wan

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A self-disappear-mask for epitaxial lateral overgrowth of GaN films

Wangyibo Chen, Yu Xu, Bing Cao, Chinhua Wang, Jianfeng Wang and Ke Xu

Journal of Crystal Growth, 2023, 610, 127149
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The influence of ammonia on graphene for gallium nitride growth by MOCVD

Miao Liu, Jizong Zhou, Zhengqian Lu, Yuning Wang, Liang Wang, Yu Xu, Bing Cao, Jianfeng Wang and Ke Xu

Jpn. J. Appl. Phys., 2025, 64, 031003
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Stability of Graphene and Influence of AlN Surface Pits on GaN Remote Heteroepitaxy for Exfoliation

Hoe-Min Kwak, Je-Sung Lee, Bo-In Park, Jaeyoung Baik, Jeongwoon Kim, Woo-Lim Jeong, Kyung-Pil Kim, Seung-Hyun Mun, Hyunseok Kim, Jeehwan Kim and Dong-Seon Lee

ACS Nano, 2023, 17, 11739
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The heterostructure of hexagonal boron nitride with wurtzite III-nitrides for optoelectronic and electronic applications

Jawon Kim, Seokho Moon, Semi Im, Jaesub Song, Changuk Ji, Seonghyeon Pak and Jong Kyu Kim

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Advanced monolithic integration strategies on wide-bandgap semiconductors: the two-dimensional material heterogeneous integration and the system-level multi-functional integration

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Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Dongdong Liang, Bei Jiang, Zhetong Liu, Zhaolong Chen, Yaqi Gao, Shenyuan Yang, Rui He, Lulu Wang, Junxue Ran, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Jingyu Sun and Tongbo Wei

Advanced Science, 2024, 11
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Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN

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Applied Physics Letters, 2024, 124
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Remote Epitaxy: Fundamentals, Challenges, and Opportunities

Bo-In Park, Jekyung Kim, Kuangye Lu, Xinyuan Zhang, Sangho Lee, Jun Min Suh, Dong-Hwan Kim, Hyunseok Kim and Jeehwan Kim

Nano Lett., 2024, 24, 2939
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Crystal Engineering Pathways Above, Below, and Between 2D Materials

Jisung Seo, Soo Ho Choi, Qi Chen, Seunghee Park, Il Jeon and Hyunseok Kim

Adv Funct Materials, 2026
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Influence of Graphene Stability on III-Nitride Remote Epitaxy for Exfoliation

Xu Han, Jiadong Yu, Peilong Yang, Bo Liu, Xun Wang, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li and Lai Wang

ACS Appl. Nano Mater., 2023, 6, 15159
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Remote Epitaxy and Exfoliation of GaN via Graphene

Xu Han, Jiadong Yu, Zhenhao Li, Xun Wang, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Yuantao Zhang, Bin Duan, Jing Ning, Haidi Wu and Lai Wang

ACS Appl. Electron. Mater., 2022, 4, 5326
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Molecular beam epitaxy of flexible InN thin films on fluorophlogopite mica

Yingzhao Geng, Yang Xu, Xu Li, Xiao Wang, Hao Wu and Chang Liu

Journal of Crystal Growth, 2025, 671, 128355
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