Issue 22, 2023

Enhancement of electrical stability of metal oxide thin-film transistors against various stresses

Abstract

Metal-oxide semiconductors are considered promising alternative materials in the field of flat panel display industry due to their advantages, such as high mobility, transparency, uniformity, low production cost, and large-area processability. Nevertheless, stress-induced instability in metal-oxide thin-film transistors should be addressed for further applications. Various external stresses, such as voltage, illumination, heat, and ionizing radiation, have been known to affect the defect states in metal-oxide thin-film transistors, resulting in degradation of electrical performance, such as threshold voltage, mobility, and subthreshold swing. Therefore, recent research efforts have been focused on the prevention/reduction of defect generation in oxide semiconductors and the adjustment of defect states in the sub-gap by various approaches, such as introducing novel materials, optimizing fabrication processes, and improving device structures. This highlight article provides an overview of recent research efforts to enhance the stability of metal-oxide thin-film transistors against various external stresses. External stresses are categorized into five different types and degradation mechanisms as well as approaches for the enhancement of device stability for each stress are discussed. This highlight article intends to inspire new studies on metal oxide thin-film transistors for developing state-of-the-art electronic devices.

Graphical abstract: Enhancement of electrical stability of metal oxide thin-film transistors against various stresses

Article information

Article type
Highlight
Submitted
05 Yan 2023
Accepted
07 Mud 2023
First published
23 Mud 2023

J. Mater. Chem. C, 2023,11, 7121-7143

Enhancement of electrical stability of metal oxide thin-film transistors against various stresses

Y. Kim and C. Kim, J. Mater. Chem. C, 2023, 11, 7121 DOI: 10.1039/D3TC00417A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements