Issue 31, 2021

An organic synaptic transistor with integration of memory and neuromorphic computing

Abstract

Artificial synapse devices have received great interest in recent years for attempting to emulate brain-like computing systems and to conquer the bottleneck of the Von Neumann system. However, integration of the memory and computing function in a single device is a huge challenge because the synaptic behavior in computing inevitably changes its memory state, while in-memory computing has become an effective way to achieve high bandwidth, low power consumption and computing requirements. Here, we demonstrate an artificial synaptic device with integration of memory and neuromorphic computing based on a field-effect transistor (FET) with a blend structure of black phosphorus quantum dots (BPQDs) and organic semiconductors. Benefiting from the switching between the two capture mechanisms, the transistor exhibits two obviously different memory states decided by the amplitude of single impulse, along with controllable adjustment of synaptic behavior while maintaining each memory state. For further describing the ability for in-memory computing, we also demonstrate the potential application of our device in pattern recognition and distributed memory with parallel computing in brain-like computing. This work provides a path toward in-memory computing applications based on transistors for future artificial brain-like computing electronics.

Graphical abstract: An organic synaptic transistor with integration of memory and neuromorphic computing

Supplementary files

Article information

Article type
Paper
Submitted
07 Mud 2021
Accepted
29 Kho 2021
First published
30 Kho 2021

J. Mater. Chem. C, 2021,9, 9972-9981

An organic synaptic transistor with integration of memory and neuromorphic computing

S. Chen, E. Li, R. Yu, H. Yang, Y. Yan, Y. Hu, H. Chen and T. Guo, J. Mater. Chem. C, 2021, 9, 9972 DOI: 10.1039/D1TC02112E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements