Issue 14, 2024

Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors

Abstract

Here, we characterize the photovoltage of n-Si/Au light-addressable electrodes (LAEs) over a range of solution potentials from ca. −1 to +1 V. We find that the n-Si/Au photoelectrodes show photovoltages consistent with a semiconductor/liquid junction in contrast to a buried junction, which opposes our previous understanding of how photovoltage originates in these sensors.

Graphical abstract: Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors

Supplementary files

Article information

Article type
Communication
Submitted
29 Mud 2024
Accepted
12 Kho 2024
First published
19 Kho 2024

Analyst, 2024,149, 3716-3720

Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors

A. Hussain, K. Mancini, Y. Khatib and G. D. O'Neil, Analyst, 2024, 149, 3716 DOI: 10.1039/D4AN00768A

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